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PM561BA Spec and Replacement


   Type Designator: PM561BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT23

 PM561BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PM561BA Specs

 ..1. Size:756K  unikc
 pm561ba.pdf pdf_icon

PM561BA

PM561BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51m @VGS = -10V -30V -4A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C -4 ID Continuous Drain Current TA = 70 A C -3 IDM -16 Pulsed Drain Current1 TA = 25 C 1.4 PD W ... See More ⇒

 ..2. Size:339K  niko-sem
 pm561ba.pdf pdf_icon

PM561BA

P-Channel Enhancement Mode PM561BA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -30V 51m -4A G S Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applicatio... See More ⇒

Detailed specifications: PM513BA , PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA , PM557BA , PM560BZ , 8N60 , PM597BA , PM600BZ , PM606BA , P2503BDG , P2503HEA , P2503HVG , P2503NVG , P2504BDG .

Keywords - PM561BA MOSFET specs

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