All MOSFET. PM561BA Datasheet

 

PM561BA Datasheet and Replacement


   Type Designator: PM561BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT23
 

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PM561BA Datasheet (PDF)

 ..1. Size:756K  unikc
 pm561ba.pdf pdf_icon

PM561BA

PM561BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID51m @VGS = -10V-30V -4ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C-4IDContinuous Drain CurrentTA = 70 AC-3IDM-16Pulsed Drain Current1TA = 25 C1.4PDW

 ..2. Size:339K  niko-sem
 pm561ba.pdf pdf_icon

PM561BA

P-Channel Enhancement Mode PM561BA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID -30V 51m -4A GSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applicatio

Datasheet: PM513BA , PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA , PM557BA , PM560BZ , K2611 , PM597BA , PM600BZ , PM606BA , P2503BDG , P2503HEA , P2503HVG , P2503NVG , P2504BDG .

History: IPD25DP06NM | VS4802GKM

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