All MOSFET. PM597BA Datasheet

 

PM597BA Datasheet and Replacement


   Type Designator: PM597BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOT23
 

 PM597BA substitution

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PM597BA Datasheet (PDF)

 ..1. Size:764K  unikc
 pm597ba.pdf pdf_icon

PM597BA

PM597BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID43m @VGS = -4.5V-20V -4.5ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 12 VTA = 25 C-4.5IDContinuous Drain CurrentTA = 70 AC-3.6IDM-16Pulsed Drain Current1TA = 25 C1.4

 ..2. Size:245K  niko-sem
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PM597BA

P-Channel Enhancement Mode PM597BANIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY DV(BR)DSS RDS(ON) ID -20V 30m -5.3A GSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Application

Datasheet: PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA , PM557BA , PM560BZ , PM561BA , MMIS60R580P , PM600BZ , PM606BA , P2503BDG , P2503HEA , P2503HVG , P2503NVG , P2504BDG , P2504EDG .

History: RJK03F0DPA

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