PM597BA Spec and Replacement
Type Designator: PM597BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: SOT23
PM597BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PM597BA Specs
pm597ba.pdf
PM597BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 43m @VGS = -4.5V -20V -4.5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 12 V TA = 25 C -4.5 ID Continuous Drain Current TA = 70 A C -3.6 IDM -16 Pulsed Drain Current1 TA = 25 C 1.4 ... See More ⇒
pm597ba.pdf
P-Channel Enhancement Mode PM597BA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -20V 30m -5.3A G S Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Application... See More ⇒
Detailed specifications: PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA , PM557BA , PM560BZ , PM561BA , P60NF06 , PM600BZ , PM606BA , P2503BDG , P2503HEA , P2503HVG , P2503NVG , P2504BDG , P2504EDG .
History: CJU4828
Keywords - PM597BA MOSFET specs
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