PM600BZ Datasheet. Specs and Replacement
Type Designator: PM600BZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 114 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SOT23
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PM600BZ substitution
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PM600BZ datasheet
pm600bz.pdf
PM600BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 13.5m @VGS = 10V 30V 6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 6 ID Continuous Drain Current TA = 70 C 4.8 A IDM 18 Pulsed Drain Current1 ... See More ⇒
Detailed specifications: PM516BA, PM516BZ, PM523BA, PM550BA, PM557BA, PM560BZ, PM561BA, PM597BA, 75N75, PM606BA, P2503BDG, P2503HEA, P2503HVG, P2503NVG, P2504BDG, P2504EDG, P2504EI
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