PM600BZ Spec and Replacement
Type Designator: PM600BZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 114 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SOT23
PM600BZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PM600BZ Specs
pm600bz.pdf
PM600BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 13.5m @VGS = 10V 30V 6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 6 ID Continuous Drain Current TA = 70 C 4.8 A IDM 18 Pulsed Drain Current1 ... See More ⇒
Detailed specifications: PM516BA , PM516BZ , PM523BA , PM550BA , PM557BA , PM560BZ , PM561BA , PM597BA , 75N75 , PM606BA , P2503BDG , P2503HEA , P2503HVG , P2503NVG , P2504BDG , P2504EDG , P2504EI .
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