All MOSFET. PM600BZ Datasheet

 

PM600BZ Datasheet and Replacement


   Type Designator: PM600BZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SOT23
 

 PM600BZ substitution

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PM600BZ Datasheet (PDF)

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PM600BZ

PM600BZN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID13.5m @VGS = 10V30V 6ASOT-23ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C6IDContinuous Drain CurrentTA = 70 C4.8 AIDM18Pulsed Drain Current1

Datasheet: PM516BA , PM516BZ , PM523BA , PM550BA , PM557BA , PM560BZ , PM561BA , PM597BA , IRF520 , PM606BA , P2503BDG , P2503HEA , P2503HVG , P2503NVG , P2504BDG , P2504EDG , P2504EI .

History: SI4622DY | VBZL80N03

Keywords - PM600BZ MOSFET datasheet

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