P5503QV Spec and Replacement
Type Designator: P5503QV
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 146 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP8
P5503QV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P5503QV Specs
p5503qv.pdf
P5503QV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 22m @VGS =10V 30V 7.5A N 60m @VGS = -10V -30V -4.5A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 7.5 TA = 25 C P -4.5 ID ... See More ⇒
Detailed specifications: P2806HV , P5102FM , P5102FM6 , P5102FMA , P5102FMNV , P5103EAG , P5103EMA , P5103EMG , 20N60 , P5504EDG , P5504EVG , P5506BDG , P5506BVG , P5506HVG , P5506NVG , P2803BMG , P2803HVG .
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