P5503QV Datasheet and Replacement
Type Designator: P5503QV
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 146 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP8
P5503QV substitution
P5503QV Datasheet (PDF)
p5503qv.pdf

P5503QVN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel22m @VGS =10V30V 7.5A N60m @VGS = -10V-30V -4.5A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 7.5TA = 25 CP -4.5ID
Datasheet: P2806HV , P5102FM , P5102FM6 , P5102FMA , P5102FMNV , P5103EAG , P5103EMA , P5103EMG , 20N60 , P5504EDG , P5504EVG , P5506BDG , P5506BVG , P5506HVG , P5506NVG , P2803BMG , P2803HVG .
History: P5103EMA | P5504EVG | P5504EDG
Keywords - P5503QV MOSFET datasheet
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History: P5103EMA | P5504EVG | P5504EDG



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