P5803NAG Datasheet. Specs and Replacement

Type Designator: P5803NAG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: TSOP6

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P5803NAG datasheet

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P5803NAG

P5803NAG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 58m @VGS = 10V 30V 3A N 115m @VGS = -10V -30V -2A P TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 3 TA = 25 C P -2 ID Co... See More ⇒

 ..2. Size:923K  cn vbsemi
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P5803NAG

P5803NAG www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at V... See More ⇒

Detailed specifications: P2803HVG, P2803NVG, P2904BD, P5010AV, P5015ATF, P5015BD, P5015BTF, P50N03LTG, AON6414A, P5806NVG, PB521BX, PV501BA, PV507BA, PV510BA, PV516DA, PV537BA, PV548BA

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