All MOSFET. P5803NAG Datasheet

 

P5803NAG Datasheet and Replacement


   Type Designator: P5803NAG
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TSOP6
 

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P5803NAG Datasheet (PDF)

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P5803NAG

P5803NAGN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel58m @VGS = 10V30V 3A N115m @VGS = -10V-30V -2A PTSOP- 06ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 3TA = 25 CP -2IDCo

 ..2. Size:923K  cn vbsemi
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P5803NAG

P5803NAGwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

Datasheet: P2803HVG , P2803NVG , P2904BD , P5010AV , P5015ATF , P5015BD , P5015BTF , P50N03LTG , IRFB4110 , P5806NVG , PB521BX , PV501BA , PV507BA , PV510BA , PV516DA , PV537BA , PV548BA .

History: FQP2N30 | CS50N06P | PK8B0BA | SSM3K335R | KU310N10F | BUK9Y153-100E | APT47N60BCFG

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