All MOSFET. P5806NVG Datasheet

 

P5806NVG Datasheet and Replacement


   Type Designator: P5806NVG
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOP8
 

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P5806NVG Datasheet (PDF)

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P5806NVG

P5806NVGN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel65m @VGS = 10V60V 4.5A N120m @VGS = -10V-60V -3.5A PSOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 60VDSDrain-Source VoltageP -60VN 20VGSGate-Source VoltageP 20N 4.5TA = 25 CP -3.5

Datasheet: P2803NVG , P2904BD , P5010AV , P5015ATF , P5015BD , P5015BTF , P50N03LTG , P5803NAG , IRFP250N , PB521BX , PV501BA , PV507BA , PV510BA , PV516DA , PV537BA , PV548BA , PV551BA .

History: NVMTS0D6N04C

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