P5806NVG Datasheet. Specs and Replacement

Type Designator: P5806NVG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOP8

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P5806NVG datasheet

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P5806NVG

P5806NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 65m @VGS = 10V 60V 4.5A N 120m @VGS = -10V -60V -3.5A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 60 VDS Drain-Source Voltage P -60 V N 20 VGS Gate-Source Voltage P 20 N 4.5 TA = 25 C P -3.5 ... See More ⇒

Detailed specifications: P2803NVG, P2904BD, P5010AV, P5015ATF, P5015BD, P5015BTF, P50N03LTG, P5803NAG, IRFB4115, PB521BX, PV501BA, PV507BA, PV510BA, PV516DA, PV537BA, PV548BA, PV551BA

Keywords - P5806NVG MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs