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P5806NVG Spec and Replacement


   Type Designator: P5806NVG
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOP8

 P5806NVG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P5806NVG Specs

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P5806NVG

P5806NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 65m @VGS = 10V 60V 4.5A N 120m @VGS = -10V -60V -3.5A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 60 VDS Drain-Source Voltage P -60 V N 20 VGS Gate-Source Voltage P 20 N 4.5 TA = 25 C P -3.5 ... See More ⇒

Detailed specifications: P2803NVG , P2904BD , P5010AV , P5015ATF , P5015BD , P5015BTF , P50N03LTG , P5803NAG , IRFB4115 , PB521BX , PV501BA , PV507BA , PV510BA , PV516DA , PV537BA , PV548BA , PV551BA .

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