All MOSFET. PB521BX Datasheet

 

PB521BX Datasheet and Replacement


   Type Designator: PB521BX
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 179 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: PDFN2X2S
 

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PB521BX Datasheet (PDF)

 ..1. Size:437K  unikc
 pb521bx.pdf pdf_icon

PB521BX

PB521BXP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID21m @VGS = -4.5V-20V -7.4APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20VVGSGate-Source Voltage 8TA = 25 C-8IDContinuous Drain CurrentTA= 70 C-6.4 AIDM29Pulsed Drain Cu

 ..2. Size:213K  niko-sem
 pb521bx.pdf pdf_icon

PB521BX

P-Channel Enhancement Mode PB521BXNIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-FreeD PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 21m -8AGG : GATE D : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS -20 VGate-Source Voltage VGS 10 VTA =

Datasheet: P2904BD , P5010AV , P5015ATF , P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , IRF9540 , PV501BA , PV507BA , PV510BA , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA .

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