PB521BX Datasheet. Specs and Replacement

Type Designator: PB521BX  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 179 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: PDFN2X2S

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PB521BX datasheet

 ..1. Size:437K  unikc
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PB521BX

PB521BX P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 21m @VGS = -4.5V -20V -7.4A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -8 ID Continuous Drain Current TA= 70 C -6.4 A IDM 29 Pulsed Drain Cu... See More ⇒

 ..2. Size:213K  niko-sem
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PB521BX

P-Channel Enhancement Mode PB521BX NIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 21m -8A G G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 10 V TA =... See More ⇒

Detailed specifications: P2904BD, P5010AV, P5015ATF, P5015BD, P5015BTF, P50N03LTG, P5803NAG, P5806NVG, 2N7000, PV501BA, PV507BA, PV510BA, PV516DA, PV537BA, PV548BA, PV551BA, PV600BA

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