All MOSFET. PB521BX Datasheet

 

PB521BX Datasheet and Replacement


   Type Designator: PB521BX
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 179 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: PDFN2X2S

 PB521BX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PB521BX Datasheet (PDF)

 ..1. Size:437K  unikc
 pb521bx.pdf pdf_icon

PB521BX

PB521BX P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 21m @VGS = -4.5V -20V -7.4A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -8 ID Continuous Drain Current TA= 70 C -6.4 A IDM 29 Pulsed Drain Cu... See More ⇒

 ..2. Size:213K  niko-sem
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PB521BX

P-Channel Enhancement Mode PB521BX NIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 21m -8A G G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 10 V TA =... See More ⇒

Datasheet: P2904BD , P5010AV , P5015ATF , P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , 2N7000 , PV501BA , PV507BA , PV510BA , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA .

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