All MOSFET. PV507BA Datasheet

 

PV507BA Datasheet and Replacement


   Type Designator: PV507BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 51 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 337 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8
 

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PV507BA Datasheet (PDF)

 ..1. Size:496K  unikc
 pv507ba.pdf pdf_icon

PV507BA

PV507BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = -10V -30V -13ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-13IDContinuous Drain CurrentTA = 70 C-10AIDM-50Pulsed Drain C

 ..2. Size:212K  niko-sem
 pv507ba.pdf pdf_icon

PV507BA

P-Channel Logic Level Enhancement Mode PV507BA NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m -13A -30V GG : GATE D : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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