All MOSFET. PV507BA Datasheet

 

PV507BA Datasheet and Replacement


   Type Designator: PV507BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 337 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8
 

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PV507BA Datasheet (PDF)

 ..1. Size:496K  unikc
 pv507ba.pdf pdf_icon

PV507BA

PV507BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = -10V -30V -13ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-13IDContinuous Drain CurrentTA = 70 C-10AIDM-50Pulsed Drain C

 ..2. Size:212K  niko-sem
 pv507ba.pdf pdf_icon

PV507BA

P-Channel Logic Level Enhancement Mode PV507BA NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m -13A -30V GG : GATE D : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage V

Datasheet: P5015ATF , P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX , PV501BA , 2SK3878 , PV510BA , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA .

History: WMM120P06TS | FDD2670

Keywords - PV507BA MOSFET datasheet

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