All MOSFET. PV507BA Datasheet

 

PV507BA MOSFET. Datasheet pdf. Equivalent

Type Designator: PV507BA

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 4.1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 337 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: SOP8

PV507BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PV507BA Datasheet (PDF)

0.1. pv507ba.pdf Size:496K _unikc

PV507BA
PV507BA

PV507BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14mΩ @VGS = -10V -30V -13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TA = 25 ° C -13 ID Continuous Drain Current TA = 70 ° C -10 A IDM -50 Pulsed Drain C

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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