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PV537BA Specs and Replacement


   Type Designator: PV537BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 374 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8
 

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PV537BA Specs

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PV537BA

PV537BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = -10V -30V -11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -11 ID Continuous Drain Current TA = 70 C -8.7 A IDM -50 Pulsed Drain C... See More ⇒

Detailed specifications: P50N03LTG , P5803NAG , P5806NVG , PB521BX , PV501BA , PV507BA , PV510BA , PV516DA , IRF630 , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , PV606BA , PV628BA , PV628DA .

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