All MOSFET. PV537BA Datasheet

 

PV537BA Datasheet and Replacement


   Type Designator: PV537BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 374 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8
 

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PV537BA Datasheet (PDF)

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PV537BA

PV537BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = -10V -30V -11ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-11IDContinuous Drain CurrentTA = 70 C-8.7AIDM-50Pulsed Drain C

Datasheet: P50N03LTG , P5803NAG , P5806NVG , PB521BX , PV501BA , PV507BA , PV510BA , PV516DA , 7N65 , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , PV606BA , PV628BA , PV628DA .

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