PV537BA Datasheet. Specs and Replacement

Type Designator: PV537BA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 374 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SOP8

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PV537BA datasheet

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PV537BA

PV537BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = -10V -30V -11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -11 ID Continuous Drain Current TA = 70 C -8.7 A IDM -50 Pulsed Drain C... See More ⇒

Detailed specifications: P50N03LTG, P5803NAG, P5806NVG, PB521BX, PV501BA, PV507BA, PV510BA, PV516DA, IRFP250N, PV548BA, PV551BA, PV600BA, PV601CA, PV604CA, PV606BA, PV628BA, PV628DA

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