All MOSFET. PV537BA Datasheet

 

PV537BA MOSFET. Datasheet pdf. Equivalent

Type Designator: PV537BA

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.8 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 374 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: SOP8

PV537BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PV537BA Datasheet (PDF)

0.1. pv537ba.pdf Size:483K _unikc

PV537BA PV537BA

PV537BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9mΩ @VGS = -10V -30V -11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 TA = 25 ° C -11 ID Continuous Drain Current TA = 70 ° C -8.7 A IDM -50 Pulsed Drain C

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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