All MOSFET. PV548BA Datasheet

 

PV548BA Datasheet and Replacement


   Type Designator: PV548BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 343 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: SOP8
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PV548BA Datasheet (PDF)

 ..1. Size:461K  unikc
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PV548BA

PV548BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.6m @VGS = 10V30V 14ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C14IDContinuous Drain CurrentTA = 70 C11AIDM150Pulsed Drain Current1

 ..2. Size:417K  niko-sem
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PV548BA

PV548BA N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 5.6m 14A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA = 25

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History: AP2P053N | FQB7P20TM_F085 | CS8N65P | AFN4214W | FTK4407 | AFN4896 | 17P10L-TF3-T

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