All MOSFET. PV600BA Datasheet

 

PV600BA MOSFET. Datasheet pdf. Equivalent

Type Designator: PV600BA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.95 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 41 nS

Drain-Source Capacitance (Cd): 108 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0108 Ohm

Package: SOP8

PV600BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PV600BA Datasheet (PDF)

0.1. pv600ba.pdf Size:769K _unikc

PV600BA
PV600BA

PV600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10.8mΩ @VGS = 10V 30V 10A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TA = 25 ° C 10 ID Continuous Drain Current TA = 70 ° C 8 A IDM 40 Pulsed Drain Current1

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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