PV606BA Datasheet. Specs and Replacement

Type Designator: PV606BA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOP8

  📄📄 Copy 

PV606BA substitution

- MOSFET ⓘ Cross-Reference Search

 

PV606BA datasheet

 ..1. Size:464K  unikc
 pv606ba.pdf pdf_icon

PV606BA

PV606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 18m @VGS = 10V 30V 7.7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 7.7 ID Continuous Drain Current TA = 70 C 6 A IDM 28 Pulsed Drain Current1 ... See More ⇒

 ..2. Size:237K  niko-sem
 pv606ba.pdf pdf_icon

PV606BA

... See More ⇒

Detailed specifications: PV510BA, PV516DA, PV537BA, PV548BA, PV551BA, PV600BA, PV601CA, PV604CA, IRF1010E, PV628BA, PV628DA, PV650BA, P6002OAG, P6003QEA, P6004ED, P6006BD, P6006BI

Keywords - PV606BA MOSFET specs

 PV606BA cross reference

 PV606BA equivalent finder

 PV606BA pdf lookup

 PV606BA substitution

 PV606BA replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs