PV606BA PDF and Equivalents Search

 

PV606BA PDF Specs and Replacement


   Type Designator: PV606BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
 

 PV606BA substitution

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PV606BA PDF Specs

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PV606BA

PV606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 18m @VGS = 10V 30V 7.7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 7.7 ID Continuous Drain Current TA = 70 C 6 A IDM 28 Pulsed Drain Current1 ... See More ⇒

 ..2. Size:237K  niko-sem
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PV606BA

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Detailed specifications: PV510BA , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , IRF9540N , PV628BA , PV628DA , PV650BA , P6002OAG , P6003QEA , P6004ED , P6006BD , P6006BI .

Keywords - PV606BA MOSFET specs

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