All MOSFET. PV606BA Datasheet

 

PV606BA Datasheet and Replacement


   Type Designator: PV606BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
 

 PV606BA substitution

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PV606BA Datasheet (PDF)

 ..1. Size:464K  unikc
 pv606ba.pdf pdf_icon

PV606BA

PV606BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID18m @VGS = 10V30V 7.7ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTA = 25 C7.7IDContinuous Drain CurrentTA = 70 C6AIDM28Pulsed Drain Current1

 ..2. Size:237K  niko-sem
 pv606ba.pdf pdf_icon

PV606BA

PV606BA N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 20m 7A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA = 25

Datasheet: PV510BA , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , IRF1010E , PV628BA , PV628DA , PV650BA , P6002OAG , P6003QEA , P6004ED , P6006BD , P6006BI .

History: TSM2314CX | SM6011NSF | AM2308 | IXFT30N40Q | PHD18NQ10T | H02N60SI | PKCH6BB

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