All MOSFET. P6003QEA Datasheet

 

P6003QEA Datasheet and Replacement


   Type Designator: P6003QEA
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PDFN3X3P
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P6003QEA Datasheet (PDF)

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P6003QEA

P6003QEAN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel24m @VGS = 10V30V 20A N60m @VGS = -10V-30V -12A PPDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 20TC = 25 CP -12N 13

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - P6003QEA MOSFET datasheet

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