P6003QEA Datasheet. Specs and Replacement

Type Designator: P6003QEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: PDFN3X3P

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P6003QEA datasheet

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P6003QEA

P6003QEA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 24m @VGS = 10V 30V 20A N 60m @VGS = -10V -30V -12A P PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 20 TC = 25 C P -12 N 13 ... See More ⇒

Detailed specifications: PV600BA, PV601CA, PV604CA, PV606BA, PV628BA, PV628DA, PV650BA, P6002OAG, IRFP260, P6004ED, P6006BD, P6006BI, P6006HV, P6010DDG, P6010DTFG, P6010DTG, P6015AD

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