All MOSFET. P6003QEA Datasheet

 

P6003QEA Datasheet and Replacement


   Type Designator: P6003QEA
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PDFN3X3P
 

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P6003QEA Datasheet (PDF)

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P6003QEA

P6003QEAN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel24m @VGS = 10V30V 20A N60m @VGS = -10V-30V -12A PPDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 20TC = 25 CP -12N 13

Datasheet: PV600BA , PV601CA , PV604CA , PV606BA , PV628BA , PV628DA , PV650BA , P6002OAG , 4435 , P6004ED , P6006BD , P6006BI , P6006HV , P6010DDG , P6010DTFG , P6010DTG , P6015AD .

History: NCE55P15I | OSG65R340DZF | MTC4506Q8 | CEB1195 | MTC4506J4

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