P6003QEA Datasheet and Replacement
Type Designator: P6003QEA
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: PDFN3X3P
P6003QEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P6003QEA Datasheet (PDF)
p6003qea.pdf
P6003QEA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 24m @VGS = 10V 30V 20A N 60m @VGS = -10V -30V -12A P PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 20 TC = 25 C P -12 N 13 ... See More ⇒
Datasheet: PV600BA , PV601CA , PV604CA , PV606BA , PV628BA , PV628DA , PV650BA , P6002OAG , IRFP260 , P6004ED , P6006BD , P6006BI , P6006HV , P6010DDG , P6010DTFG , P6010DTG , P6015AD .
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