P6004ED Datasheet and Replacement
Type Designator: P6004ED
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 131 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO252
P6004ED Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P6004ED Datasheet (PDF)
p6004ed.pdf
P6004ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -40V -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -20 ID Continuous Drain Current TC = 100 C -16 A IDM -80 Pulsed Drain Cu... See More ⇒
mxp6004cts.pdf
MXP6004CTS Datasheet 60V N-Channel MOSFET VDSS 60 V Applications Power Supply RDS(ON)(Max) 4.0 m DC-DC Converters (Typ) 3.3 m IDa 215A Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP6004CTS TO220... See More ⇒
Datasheet: PV601CA , PV604CA , PV606BA , PV628BA , PV628DA , PV650BA , P6002OAG , P6003QEA , 4435 , P6006BD , P6006BI , P6006HV , P6010DDG , P6010DTFG , P6010DTG , P6015AD , P6015AT .
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