All MOSFET. P6004ED Datasheet

 

P6004ED Datasheet and Replacement


   Type Designator: P6004ED
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO252
 

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P6004ED Datasheet (PDF)

 ..1. Size:579K  unikc
 p6004ed.pdf pdf_icon

P6004ED

P6004EDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = -10V-40V -20ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-20IDContinuous Drain CurrentTC = 100 C-16AIDM-80Pulsed Drain Cu

 9.1. Size:394K  maxpower
 mxp6004cts.pdf pdf_icon

P6004ED

MXP6004CTS Datasheet 60V N-Channel MOSFET VDSS 60 V Applications: Power Supply RDS(ON)(Max) 4.0 m DC-DC Converters (Typ) 3.3 m IDa 215A Features: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP6004CTS TO220

Datasheet: PV601CA , PV604CA , PV606BA , PV628BA , PV628DA , PV650BA , P6002OAG , P6003QEA , AON7410 , P6006BD , P6006BI , P6006HV , P6010DDG , P6010DTFG , P6010DTG , P6015AD , P6015AT .

History: SQJA88EP | MTC4506J4 | OSG65R340DZF | MTC4506Q8 | CEB1195 | NCE55P15I | P6003QEA

Keywords - P6004ED MOSFET datasheet

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