P6004ED Datasheet. Specs and Replacement
Type Designator: P6004ED 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 131 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO252
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P6004ED datasheet
p6004ed.pdf
P6004ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -40V -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -20 ID Continuous Drain Current TC = 100 C -16 A IDM -80 Pulsed Drain Cu... See More ⇒
mxp6004cts.pdf
MXP6004CTS Datasheet 60V N-Channel MOSFET VDSS 60 V Applications Power Supply RDS(ON)(Max) 4.0 m DC-DC Converters (Typ) 3.3 m IDa 215A Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP6004CTS TO220... See More ⇒
Detailed specifications: PV601CA, PV604CA, PV606BA, PV628BA, PV628DA, PV650BA, P6002OAG, P6003QEA, 4435, P6006BD, P6006BI, P6006HV, P6010DDG, P6010DTFG, P6010DTG, P6015AD, P6015AT
Keywords - P6004ED MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
