All MOSFET. P6402FMG Datasheet

 

P6402FMG MOSFET. Datasheet pdf. Equivalent


   Type Designator: P6402FMG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.4 nC
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: SOT23

 P6402FMG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P6402FMG Datasheet (PDF)

 ..1. Size:593K  unikc
p6402fmg.pdf

P6402FMG
P6402FMG

P6402FMGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID64m @VGS = -4.5V-20V -4ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20VVGSGate-Source Voltage 12TA = 25 C-4IDContinuous Drain CurrentTA = 70 AC-3IDM-20Pulse

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top