All MOSFET. PK6H2BA Datasheet

 

PK6H2BA Datasheet and Replacement


   Type Designator: PK6H2BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 108 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 1058 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PDFN5X6P

 PK6H2BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PK6H2BA Datasheet (PDF)

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PK6H2BA

PK6H2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.4m @VGS = 10V 30V 108A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 108 ID Continuous Drain Current4 TC = 100

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History: P6015AV

Keywords - PK6H2BA MOSFET datasheet

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