All MOSFET. PK6H2BA Datasheet

 

PK6H2BA Datasheet and Replacement


   Type Designator: PK6H2BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 108 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 1058 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PDFN5X6P
 

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PK6H2BA Datasheet (PDF)

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PK6H2BA

PK6H2BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.4m @VGS = 10V30V 108A100% UIS Tested100% Rg TestedPDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C108IDContinuous Drain Current4TC = 100

Datasheet: PK632BA , PK636BA , PK650BA , PK664BA , PK696BA , PK698SA , PK6A6BA , PK6B2BA , IRF2807 , PA002FMA , PA002FMG , PA004EM , PA010HK , PA102FDG , PA102FMA , PA102FMG , PA110BC .

History: STB11NK40ZT4 | STB11NM60N-1 | SSM630GP | 50N06L-TF3T-T

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