All MOSFET. PK6H2BA Datasheet

 

PK6H2BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PK6H2BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
   |Id|ⓘ - Maximum Drain Current: 108 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 74 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 1058 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PDFN5X6P

 PK6H2BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PK6H2BA Datasheet (PDF)

 ..1. Size:916K  unikc
 pk6h2ba.pdf

PK6H2BA PK6H2BA

PK6H2BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.4m @VGS = 10V30V 108A100% UIS Tested100% Rg TestedPDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C108IDContinuous Drain Current4TC = 100

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: WM02P06H | SSW1N50A

 

 
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