All MOSFET. PA203EMG Datasheet

 

PA203EMG Datasheet and Replacement


   Type Designator: PA203EMG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT23
 

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PA203EMG Datasheet (PDF)

 ..1. Size:589K  unikc
 pa203emg.pdf pdf_icon

PA203EMG

PA203EMGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = -10V-30V -2.6ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-2.6IDContinuous Drain CurrentTA = 70 AC-2.1IDM-10

 9.1. Size:81K  jiangsu
 tpa2030nnd03.pdf pdf_icon

PA203EMG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TPA2030NND03 TRANSISTOR C WBFBP-03B TOP DESCRIPTION (1.21.20.5) unit: mm PNP Epitaxial planar Silicon Transistor B E C FEATURES C 1. BASE Collector current is large. BACK 2. EMITTER Collector saturation voltage is low. 3. COLLECTOR VCE (sat) -250mA At IC

Datasheet: PA102FDG , PA102FMA , PA102FMG , PA110BC , PA110BD , PA110BDA , PA110BL , PA110BV , IRF1405 , PA210BC , PA210BL , PA210HK , PA210HV , PA210HVA , PA406EM , PA410BD , PA502FMG .

History: IRFZ44NS | NCE60ND08S | PA210HV

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