PA203EMG Datasheet. Specs and Replacement

Type Designator: PA203EMG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT23

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PA203EMG datasheet

 ..1. Size:589K  unikc
 pa203emg.pdf pdf_icon

PA203EMG

PA203EMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 120m @VGS = -10V -30V -2.6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -2.6 ID Continuous Drain Current TA = 70 A C -2.1 IDM -10 ... See More ⇒

 9.1. Size:81K  jiangsu
 tpa2030nnd03.pdf pdf_icon

PA203EMG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TPA2030NND03 TRANSISTOR C WBFBP-03B TOP DESCRIPTION (1.2 1.2 0.5) unit mm PNP Epitaxial planar Silicon Transistor B E C FEATURES C 1. BASE Collector current is large. BACK 2. EMITTER Collector saturation voltage is low. 3. COLLECTOR VCE (sat) -250mA At IC... See More ⇒

Detailed specifications: PA102FDG, PA102FMA, PA102FMG, PA110BC, PA110BD, PA110BDA, PA110BL, PA110BV, IRF830, PA210BC, PA210BL, PA210HK, PA210HV, PA210HVA, PA406EM, PA410BD, PA502FMG

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