All MOSFET. PA203EMG Datasheet

 

PA203EMG Datasheet and Replacement


   Type Designator: PA203EMG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT23

 PA203EMG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PA203EMG Datasheet (PDF)

 ..1. Size:589K  unikc
 pa203emg.pdf pdf_icon

PA203EMG

PA203EMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 120m @VGS = -10V -30V -2.6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -2.6 ID Continuous Drain Current TA = 70 A C -2.1 IDM -10 ... See More ⇒

 9.1. Size:81K  jiangsu
 tpa2030nnd03.pdf pdf_icon

PA203EMG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TPA2030NND03 TRANSISTOR C WBFBP-03B TOP DESCRIPTION (1.2 1.2 0.5) unit mm PNP Epitaxial planar Silicon Transistor B E C FEATURES C 1. BASE Collector current is large. BACK 2. EMITTER Collector saturation voltage is low. 3. COLLECTOR VCE (sat) -250mA At IC... See More ⇒

Datasheet: PA102FDG , PA102FMA , PA102FMG , PA110BC , PA110BD , PA110BDA , PA110BL , PA110BV , IRF830 , PA210BC , PA210BL , PA210HK , PA210HV , PA210HVA , PA406EM , PA410BD , PA502FMG .

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