PA410BD Datasheet. Specs and Replacement

Type Designator: PA410BD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO252

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PA410BD datasheet

 ..1. Size:737K  unikc
 pa410bd.pdf pdf_icon

PA410BD

PA410BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 140m @VGS = 10V 100V 10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC = 25 C 10 ID Continuous Drain Current TC = 100 C 7 A IDM 30 Pulsed Drain Curren... See More ⇒

 ..2. Size:302K  niko-sem
 pa410bd.pdf pdf_icon

PA410BD

N-Channel Enhancement Mode PA410BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 2. DRAIN 100V 140m 10A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = ... See More ⇒

 8.1. Size:203K  niko-sem
 pa410btf.pdf pdf_icon

PA410BD

N-Channel Enhancement Mode PA410BTF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 100V 140m 10A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC ... See More ⇒

Detailed specifications: PA110BV, PA203EMG, PA210BC, PA210BL, PA210HK, PA210HV, PA210HVA, PA406EM, RU7088R, PA502FMG, PA504EM, PA504EV, PA606BMG, PA606HAG, PA610AD, PA610ATF, PA610DD

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