PA502FMG Datasheet. Specs and Replacement

Type Designator: PA502FMG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT23

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PA502FMG datasheet

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PA502FMG

PA502FMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150m @VGS = -4.5V -20V -3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 12 TA = 25 C -3 ID Continuous Drain Current TA = 70 C -1.9 A IDM -12 P... See More ⇒

Detailed specifications: PA203EMG, PA210BC, PA210BL, PA210HK, PA210HV, PA210HVA, PA406EM, PA410BD, MMIS60R580P, PA504EM, PA504EV, PA606BMG, PA606HAG, PA610AD, PA610ATF, PA610DD, PA610DTF

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