All MOSFET. PA504EV Datasheet

 

PA504EV Datasheet and Replacement


   Type Designator: PA504EV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOP8
 

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PA504EV Datasheet (PDF)

 ..1. Size:489K  unikc
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PA504EV

PA504EVP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150m @VGS = -10V -40V -2.7ASOP- 8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TA = 25 C-2.7IDContinuous Drain Current2TA = 70 C-2.1AIDM-15Pulsed Dra

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 pa504em.pdf pdf_icon

PA504EV

PA504EMP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150m @VGS = -10V-40V -1.5ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C-1.5IDContinuous Drain CurrentTA = 70 AC-1.1IDM-9Pulsed Drain Current1TA = 25 C0.5PD

Datasheet: PA210BL , PA210HK , PA210HV , PA210HVA , PA406EM , PA410BD , PA502FMG , PA504EM , AO3407 , PA606BMG , PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA .

History: HGB120N10A | SPP03N60C3 | AM60N10-70PC | TSM2312CX | CJQ4406 | 2N7002NXBK | SI2305CDS

Keywords - PA504EV MOSFET datasheet

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