PA504EV Datasheet. Specs and Replacement

Type Designator: PA504EV  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOP8

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PA504EV datasheet

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 pa504ev.pdf pdf_icon

PA504EV

PA504EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150m @VGS = -10V -40V -2.7A SOP- 8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TA = 25 C -2.7 ID Continuous Drain Current2 TA = 70 C -2.1 A IDM -15 Pulsed Dra... See More ⇒

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 pa504em.pdf pdf_icon

PA504EV

PA504EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150m @VGS = -10V -40V -1.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C -1.5 ID Continuous Drain Current TA = 70 A C -1.1 IDM -9 Pulsed Drain Current1 TA = 25 C 0.5 PD... See More ⇒

Detailed specifications: PA210BL, PA210HK, PA210HV, PA210HVA, PA406EM, PA410BD, PA502FMG, PA504EM, AO4407A, PA606BMG, PA606HAG, PA610AD, PA610ATF, PA610DD, PA610DTF, PA610NV, PB5A2BA

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