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PA504EV Spec and Replacement


   Type Designator: PA504EV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOP8

 PA504EV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PA504EV Specs

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PA504EV

PA504EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150m @VGS = -10V -40V -2.7A SOP- 8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TA = 25 C -2.7 ID Continuous Drain Current2 TA = 70 C -2.1 A IDM -15 Pulsed Dra... See More ⇒

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PA504EV

PA504EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150m @VGS = -10V -40V -1.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C -1.5 ID Continuous Drain Current TA = 70 A C -1.1 IDM -9 Pulsed Drain Current1 TA = 25 C 0.5 PD... See More ⇒

Detailed specifications: PA210BL , PA210HK , PA210HV , PA210HVA , PA406EM , PA410BD , PA502FMG , PA504EM , AO4407A , PA606BMG , PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA .

Keywords - PA504EV MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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