PA606BMG Datasheet. Specs and Replacement

Type Designator: PA606BMG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SOT23

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PA606BMG datasheet

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 pa606bmg.pdf pdf_icon

PA606BMG

PA606BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55V 180m @VGS = 10V 1.6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 55 V VGS Gate-Source Voltage 20 TA = 25 C 1.6 ID Continuous Drain Current TA = 70 C 1 A IDM 11 Pulsed Drain Current... See More ⇒

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 pa606hag.pdf pdf_icon

PA606BMG

PA606HAG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55V 160m @VGS = 10V 1.8A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 55 V VGS Gate-Source Voltage 20 TA = 25 C 1.8 ID Continuous Drain Current TA = 70 C 1.4 A IDM 11 Pulsed Drain Curr... See More ⇒

Detailed specifications: PA210HK, PA210HV, PA210HVA, PA406EM, PA410BD, PA502FMG, PA504EM, PA504EV, 60N06, PA606HAG, PA610AD, PA610ATF, PA610DD, PA610DTF, PA610NV, PB5A2BA, PB5G2JU

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