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PA606BMG Spec and Replacement


   Type Designator: PA606BMG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SOT23

 PA606BMG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PA606BMG Specs

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PA606BMG

PA606BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55V 180m @VGS = 10V 1.6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 55 V VGS Gate-Source Voltage 20 TA = 25 C 1.6 ID Continuous Drain Current TA = 70 C 1 A IDM 11 Pulsed Drain Current... See More ⇒

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 pa606hag.pdf pdf_icon

PA606BMG

PA606HAG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55V 160m @VGS = 10V 1.8A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 55 V VGS Gate-Source Voltage 20 TA = 25 C 1.8 ID Continuous Drain Current TA = 70 C 1.4 A IDM 11 Pulsed Drain Curr... See More ⇒

Detailed specifications: PA210HK , PA210HV , PA210HVA , PA406EM , PA410BD , PA502FMG , PA504EM , PA504EV , 60N06 , PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA , PB5G2JU .

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