All MOSFET. PA606BMG Datasheet

 

PA606BMG Datasheet and Replacement


   Type Designator: PA606BMG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.4 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SOT23
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PA606BMG Datasheet (PDF)

 ..1. Size:306K  unikc
 pa606bmg.pdf pdf_icon

PA606BMG

PA606BMGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID55V 180m @VGS = 10V 1.6ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 55VVGSGate-Source Voltage 20TA = 25 C1.6IDContinuous Drain CurrentTA = 70 C1AIDM11Pulsed Drain Current

 9.1. Size:310K  unikc
 pa606hag.pdf pdf_icon

PA606BMG

PA606HAGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID55V 160m @VGS = 10V 1.8ATSOP- 06ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 55VVGSGate-Source Voltage 20TA = 25 C1.8IDContinuous Drain CurrentTA = 70 C1.4AIDM11Pulsed Drain Curr

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History: APTC60SKM24CT1G | SHDC225456

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