All MOSFET. PB5A2BA Datasheet

 

PB5A2BA Datasheet and Replacement


   Type Designator: PB5A2BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN2X2S
 

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PB5A2BA Datasheet (PDF)

 ..1. Size:807K  unikc
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PB5A2BA

PB5A2BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 4.5V20V 11A100% RG TestPDFN 2X2S 100% UIL TestABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 8 VTA = 25 C11IDContinuous Drain CurrentTA= 70 C9 AIDM

 8.1. Size:306K  niko-sem
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PB5A2BA

PB5A2BX N-Channel Enhancement Mode NIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 9m 11A DGFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Application

Datasheet: PA504EV , PA606BMG , PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , IRF840 , PB5G2JU , PE5A0DZ , PE5A1BA , PE5G6EA , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC .

History: SVF2N70M | IXTM4N100A | BL3N150-P | NCEAP15ND10AG | SI2303CDS | JCS18N25VC | IXFN82N60Q3

Keywords - PB5A2BA MOSFET datasheet

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