PB5A2BA Spec and Replacement
Type Designator: PB5A2BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 224 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PDFN2X2S
PB5A2BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PB5A2BA Specs
pb5a2ba.pdf
PB5A2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 4.5V 20V 11A 100% RG Test PDFN 2X2S 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 V TA = 25 C 11 ID Continuous Drain Current TA= 70 C 9 A IDM ... See More ⇒
pb5a2bx.pdf
PB5A2BX N-Channel Enhancement Mode NIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 9m 11A D G Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Application... See More ⇒
Detailed specifications: PA504EV , PA606BMG , PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , IRF840 , PB5G2JU , PE5A0DZ , PE5A1BA , PE5G6EA , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC .
History: IXFR44N50P
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IXFR44N50P
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