PB5G2JU PDF and Equivalents Search

 

PB5G2JU Specs and Replacement


   Type Designator: PB5G2JU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 216 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TDFN2X3-6
 

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PB5G2JU datasheet

 ..1. Size:795K  unikc
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PB5G2JU

PB5G2JU Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5m @VGS = 4.5V 20V 12A 1,2 S1 3 G1 4 G2 5,6 S2 7 D1/D2 TDFN 2X3-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 10 V TA = 25 C 12 ID Continuous Drain Current TA= 7... See More ⇒

Detailed specifications: PA606BMG , PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA , 20N60 , PE5A0DZ , PE5A1BA , PE5G6EA , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC , PB210BD .

History: IXFN73N30Q | BLF879P | DH060N07D | 2SK3977 | STD17N05L-1 | RFD8P06E | NTUD3169CZ

Keywords - PB5G2JU MOSFET specs

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