All MOSFET. PB5G2JU Datasheet

 

PB5G2JU Datasheet and Replacement


   Type Designator: PB5G2JU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 216 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TDFN2X3-6
 

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PB5G2JU Datasheet (PDF)

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PB5G2JU

PB5G2JUDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.5m @VGS = 4.5V20V 12A1,2:S13:G14:G25,6:S27:D1/D2TDFN 2X3-6ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 10 VTA = 25 C12IDContinuous Drain CurrentTA= 7

Datasheet: PA606BMG , PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA , IRF840 , PE5A0DZ , PE5A1BA , PE5G6EA , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC , PB210BD .

History: H01N60SA | IXTH110N10L2 | IRFI540GPBF | FM200HB1D5B | NTD3055-094 | SLP18N50C | STM201N

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