All MOSFET. PE5A0DZ Datasheet

 

PE5A0DZ Datasheet and Replacement


   Type Designator: PE5A0DZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN3X3S
 

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PE5A0DZ Datasheet (PDF)

 ..1. Size:874K  unikc
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PE5A0DZ

PE5A0DZDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6m @VGS = 4.5V20V 55APDFN 3X3SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20VVGSGate-Source Voltage 8TC = 25 C55TC = 100 C35IDContinuous Drain Current2TA = 25 C19ATA =

 ..2. Size:719K  niko-sem
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PE5A0DZ

Dual N-Channel Enhancement Mode PE5A0DZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 6m 55A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losse

Datasheet: PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA , PB5G2JU , IRF540 , PE5A1BA , PE5G6EA , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC , PB210BD , PB210BI .

History: IPA50R520CP | TPC8203 | CS13N50A8D | AP3403GH | SM2603PSC | F12F50VX2 | RJK6025DPE

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