PE5A0DZ Datasheet. Specs and Replacement

Type Designator: PE5A0DZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: PDFN3X3S

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PE5A0DZ datasheet

 ..1. Size:874K  unikc
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PE5A0DZ

PE5A0DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6m @VGS = 4.5V 20V 55A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 TC = 25 C 55 TC = 100 C 35 ID Continuous Drain Current2 TA = 25 C 19 A TA =... See More ⇒

 ..2. Size:719K  niko-sem
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PE5A0DZ

Dual N-Channel Enhancement Mode PE5A0DZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 6m 55A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losse... See More ⇒

Detailed specifications: PA606HAG, PA610AD, PA610ATF, PA610DD, PA610DTF, PA610NV, PB5A2BA, PB5G2JU, IRF540N, PE5A1BA, PE5G6EA, PK5A1BA, PK5C8EA, PK5G6EA, PB210BC, PB210BD, PB210BI

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs