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PE5A0DZ Spec and Replacement


   Type Designator: PE5A0DZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN3X3S

 PE5A0DZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PE5A0DZ Specs

 ..1. Size:874K  unikc
 pe5a0dz.pdf pdf_icon

PE5A0DZ

PE5A0DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6m @VGS = 4.5V 20V 55A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 TC = 25 C 55 TC = 100 C 35 ID Continuous Drain Current2 TA = 25 C 19 A TA =... See More ⇒

 ..2. Size:719K  niko-sem
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PE5A0DZ

Dual N-Channel Enhancement Mode PE5A0DZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 6m 55A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losse... See More ⇒

Detailed specifications: PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA , PB5G2JU , IRF540N , PE5A1BA , PE5G6EA , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC , PB210BD , PB210BI .

History: DK48N78 | PA610NV

Keywords - PE5A0DZ MOSFET specs

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