PE5A1BA Datasheet. Specs and Replacement

Type Designator: PE5A1BA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 551 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: PDFN3X3P

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PE5A1BA datasheet

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PE5A1BA

PE5A1BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6.5m @VGS = -4.5V -20V -43A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TC = 25 C -43 TC = 100 C -27 ID Continuous Drain Current4 TA = 25... See More ⇒

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PE5A1BA

P-Channel Logic Level Enhancement Mode PE5A1BA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 6.5m -43A G S Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switch... See More ⇒

Detailed specifications: PA610AD, PA610ATF, PA610DD, PA610DTF, PA610NV, PB5A2BA, PB5G2JU, PE5A0DZ, IRF540, PE5G6EA, PK5A1BA, PK5C8EA, PK5G6EA, PB210BC, PB210BD, PB210BI, PB210BM

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