All MOSFET. PE5A1BA Datasheet

 

PE5A1BA Datasheet and Replacement


   Type Designator: PE5A1BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 551 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: PDFN3X3P
 

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PE5A1BA Datasheet (PDF)

 ..1. Size:880K  unikc
 pe5a1ba.pdf pdf_icon

PE5A1BA

PE5A1BAP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.5m @VGS = -4.5V -20V -43APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20VVGSGate-Source Voltage 8 TC = 25 C-43 TC = 100 C-27IDContinuous Drain Current4 TA = 25

 ..2. Size:266K  niko-sem
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PE5A1BA

P-Channel Logic Level Enhancement Mode PE5A1BA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 6.5m -43A GSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switch

Datasheet: PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA , PB5G2JU , PE5A0DZ , IRF540N , PE5G6EA , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC , PB210BD , PB210BI , PB210BM .

History: TSF8N65M | P2610BT | DMN3035LWN | APT60M60JFLL | SSM3J307T | IPB34CN10N | FQD2N50TF

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