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PE5G6EA Spec and Replacement


   Type Designator: PE5G6EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 643 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PDFN3X3P

 PE5G6EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PE5G6EA Specs

 ..1. Size:846K  unikc
 pe5g6ea.pdf pdf_icon

PE5G6EA

PE5G6EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 2.4m @VGS = 10V 20V 72A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 12 Tc = 25 C 72 Tc = 100 C 45 ID Continuous Drain Current3 TA = 25 C 21 A TA = ... See More ⇒

 ..2. Size:260K  niko-sem
 pe5g6ea.pdf pdf_icon

PE5G6EA

N-Channel Enhancement Mode PE5G6EA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 D D D D 24V 2.4m 72A G GATE D DRAIN S SOURCE #1 S S S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 24 V Gate-Source Voltage ... See More ⇒

Detailed specifications: PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA , PB5G2JU , PE5A0DZ , PE5A1BA , 50N06 , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC , PB210BD , PB210BI , PB210BM , PB210BTF .

History: PK5A1BA

Keywords - PE5G6EA MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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