All MOSFET. PE5G6EA Datasheet

 

PE5G6EA Datasheet and Replacement


   Type Designator: PE5G6EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 643 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PDFN3X3P
 

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PE5G6EA Datasheet (PDF)

 ..1. Size:846K  unikc
 pe5g6ea.pdf pdf_icon

PE5G6EA

PE5G6EAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID32.4m @VGS = 10V20V 72APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20VVGSGate-Source Voltage 12Tc = 25 C72Tc = 100 C45IDContinuous Drain Current3TA = 25 C21ATA =

 ..2. Size:260K  niko-sem
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PE5G6EA

N-Channel Enhancement Mode PE5G6EA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 D D D D24V 2.4m 72A G : GATE D : DRAIN S : SOURCE #1 S S S GABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 24 V Gate-Source Voltage

Datasheet: PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA , PB5G2JU , PE5A0DZ , PE5A1BA , 50N06 , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC , PB210BD , PB210BI , PB210BM , PB210BTF .

History: SI7880ADP | GSM9435WS | S10H16S | AFN04N60T220FT | DMN5L06DMKQ | DHF3205A | TSM1N60LCH

Keywords - PE5G6EA MOSFET datasheet

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