All MOSFET. PK5A1BA Datasheet

 

PK5A1BA Datasheet and Replacement


   Type Designator: PK5A1BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 542 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN5X6P
 

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PK5A1BA Datasheet (PDF)

 ..1. Size:807K  unikc
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PK5A1BA

PK5A1BAP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6m @VGS = -4.5V -20V -48A100% UIS Tested100% Rg TestedPDFN 5x6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20VVGSGate-Source Voltage 8 TC = 25 C-48 TC = 100 C-30IDCont

 ..2. Size:203K  niko-sem
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PK5A1BA

P-Channel Logic Level Enhancement Mode PK5A1BANIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID D-20V 6 m -48A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D

Datasheet: PA610DD , PA610DTF , PA610NV , PB5A2BA , PB5G2JU , PE5A0DZ , PE5A1BA , PE5G6EA , IRF640 , PK5C8EA , PK5G6EA , PB210BC , PB210BD , PB210BI , PB210BM , PB210BTF , PB210BV .

History: NVMFD5C466N | NCE60P08AS

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