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PK5C8EA Spec and Replacement


   Type Designator: PK5C8EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 624 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PDFN5X6P

 PK5C8EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PK5C8EA Specs

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PK5C8EA

PK5C8EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.4m @VGS = 10V 30V 82A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 82 ID Continuous Drain Current3 TC = 100 C 52 IDM 150 Pulsed Drain Curre... See More ⇒

Detailed specifications: PA610DTF , PA610NV , PB5A2BA , PB5G2JU , PE5A0DZ , PE5A1BA , PE5G6EA , PK5A1BA , IRFZ44 , PK5G6EA , PB210BC , PB210BD , PB210BI , PB210BM , PB210BTF , PB210BV , PB210HV .

History: P2804NVG

Keywords - PK5C8EA MOSFET specs

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