All MOSFET. PB555BA Datasheet

 

PB555BA Datasheet and Replacement


   Type Designator: PB555BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: PDFN2X2S
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PB555BA Datasheet (PDF)

 ..1. Size:831K  unikc
 pb555ba.pdf pdf_icon

PB555BA

PB555BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25m @VGS = -10V-30V -8APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-8IDContinuous Drain CurrentTA= 70 C-6.4 AIDM30Pulsed Drain Curr

 ..2. Size:248K  niko-sem
 pb555ba.pdf pdf_icon

PB555BA

P-Channel Enhancement Mode PB555BANIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -30V 25m -8AGSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G : GATE D

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SFP2955 | RSF014N03 | MEE4292-G | SVS11N60FD2 | NCE0140IA | 2SK3289 | 2SK3901-ZK

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