All MOSFET. PB555BA Datasheet

 

PB555BA Datasheet and Replacement


   Type Designator: PB555BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: PDFN2X2S
 

 PB555BA substitution

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PB555BA Datasheet (PDF)

 ..1. Size:831K  unikc
 pb555ba.pdf pdf_icon

PB555BA

PB555BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25m @VGS = -10V-30V -8APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-8IDContinuous Drain CurrentTA= 70 C-6.4 AIDM30Pulsed Drain Curr

 ..2. Size:248K  niko-sem
 pb555ba.pdf pdf_icon

PB555BA

P-Channel Enhancement Mode PB555BANIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -30V 25m -8AGSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G : GATE D

Datasheet: PK527BA , PK552DX , PK600BA , PK608BA , PK608DY , PB544DU , PB544JU , PB554DY , AON7408 , PB560DZ , PB600BA , PB606BA , PE504BA , PE506BA , PE507BA , PE521BA , PE526BA .

History: PE506BA | DMN4468LSS-13

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