All MOSFET. PE506BA Datasheet

 

PE506BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PE506BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 15.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 263 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN3X3P

 PE506BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PE506BA Datasheet (PDF)

 ..1. Size:446K  unikc
 pe506ba.pdf

PE506BA PE506BA

PE506BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6m @VGS = 10V30V 38APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTc = 25 C38Tc = 100 C24IDContinuous Drain Current3TA = 25 C12ATA= 70 C9.8IDM60Pulsed Drain

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History: IPB08CN10NG | ITF86174SQT | APT50M38JLL | SML10026DFN | IXTQ26P20P

 

 
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