All MOSFET. PE532DY Datasheet

 

PE532DY Datasheet and Replacement


   Type Designator: PE532DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: PDFN3X3S
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PE532DY Datasheet (PDF)

 ..1. Size:759K  unikc
 pe532dy.pdf pdf_icon

PE532DY

PE532DYDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID319m @VGS = 10V30V 21APDFN 3X3SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C21TC = 100 C13IDContinuous Drain Current3TA = 25 C7.5A

 8.1. Size:1073K  niko-sem
 pe532dx.pdf pdf_icon

PE532DY

Dual N-Channel Enhancement Mode PE532DX NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 30V 19m 21A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TC =

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History: 2SK3192 | FQD4N25TM

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