All MOSFET. PE614DX Datasheet

 

PE614DX Datasheet and Replacement


   Type Designator: PE614DX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: PDFN3X3P
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PE614DX Datasheet (PDF)

 ..1. Size:512K  unikc
 pe614dx.pdf pdf_icon

PE614DX

PE614DXDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12.5m @VGS = 4.5V20V 30APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 10 VTC= 25 C30TC = 100 C19IDContinuous Drain Current3TA = 25 C11ATA= 70 C9IDM80Pulsed

 ..2. Size:349K  niko-sem
 pe614dx.pdf pdf_icon

PE614DX

PE614DX Dual N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D1 D1 D2 D2PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G : GATE 20V 12.5m 30A D : DRAIN S : SOURCE #1 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 10 V TC = 25

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STP25NM60N | SSW65R190S2 | SM4186T9RL | SRT10N160LD | APT10021JFLL | NCE30P12BS | NP180N04TUJ

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