PE636BA Specs and Replacement
Type Designator: PE636BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 139 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PDFN3X3P
PE636BA substitution
- MOSFET ⓘ Cross-Reference Search
PE636BA datasheet
pe636ba.pdf
PE636BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 30V 9m 33A D D D D G G GATE S #1 S S S G D DRAIN S SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Volta... See More ⇒
Detailed specifications: PE601CA, PE606BA, PE610SA, PE614DX, PE616BA, PE618BA, PE618DT, PE632BA, AO4407, PE642DT, APM2318A, APM3055L, APM4008NG, APM4008NU, APM4010NU, APM4012NU, APM4015K
Keywords - PE636BA MOSFET specs
PE636BA cross reference
PE636BA equivalent finder
PE636BA pdf lookup
PE636BA substitution
PE636BA replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: NTD20N03L27G
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10
Popular searches
oc44 datasheet | 2sa70 | 2sa706 | 2sc539 | 2n5401 transistor equivalent | p0903bdg | c1384 transistor | 2sc1175