All MOSFET. PE636BA Datasheet

 

PE636BA Datasheet and Replacement


   Type Designator: PE636BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 139 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN3X3P
 

 PE636BA substitution

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PE636BA Datasheet (PDF)

 ..1. Size:521K  unikc
 pe636ba.pdf pdf_icon

PE636BA

PE636BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 33APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTc = 25 C33Tc = 100 C21IDContinuous Drain Current3TA = 25 C10ATA= 70

 ..2. Size:429K  niko-sem
 pe636ba.pdf pdf_icon

PE636BA

PE636BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 30V 9m 33A D D D DGG : GATE S #1 S S S G D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Volta

Datasheet: PE601CA , PE606BA , PE610SA , PE614DX , PE616BA , PE618BA , PE618DT , PE632BA , P60NF06 , PE642DT , APM2318A , APM3055L , APM4008NG , APM4008NU , APM4010NU , APM4012NU , APM4015K .

History: SVS20N60SD2 | PH5030AL | DH100P18 | TPCA8027-H | CS6849U | SSF2610E | HY3712P

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