PE642DT Specs and Replacement
Type Designator: PE642DT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: PDFN3X3S
PE642DT substitution
- MOSFET ⓘ Cross-Reference Search
PE642DT datasheet
pe642dt.pdf
PE642DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V Q2 30V 34A 10.5m @VGS = 10V Q1 30V 31A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS VDS Drain-Source Voltage 30 30 V VGS Gate-Source Voltage 20 20 TC = 25 C 34 31 ID Continuous Drain Current3 T... See More ⇒
pe642dt.pdf
Dual N-Channel Enhancement Mode PE642DT NIKO-SEM Field Effect Transistor PDFN 3x3S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 G1 9m Q2 30V 34A 2,3,4 D1 5,6,7 S2 8 G2 Q1 30V 10.5m 31A 9 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V ... See More ⇒
Detailed specifications: PE606BA, PE610SA, PE614DX, PE616BA, PE618BA, PE618DT, PE632BA, PE636BA, BS170, APM2318A, APM3055L, APM4008NG, APM4008NU, APM4010NU, APM4012NU, APM4015K, APM4015PU
Keywords - PE642DT MOSFET specs
PE642DT cross reference
PE642DT equivalent finder
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