All MOSFET. PE642DT Datasheet

 

PE642DT Datasheet and Replacement


   Type Designator: PE642DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: PDFN3X3S
 

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PE642DT Datasheet (PDF)

 ..1. Size:790K  unikc
 pe642dt.pdf pdf_icon

PE642DT

PE642DTDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10VQ2 30V 34A10.5m @VGS = 10VQ1 30V 31APDFN 3X3SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSVDSDrain-Source Voltage 30 30VVGSGate-Source Voltage 20 20TC = 25 C34 31IDContinuous Drain Current3T

 ..2. Size:335K  niko-sem
 pe642dt.pdf pdf_icon

PE642DT

Dual N-Channel Enhancement Mode PE642DTNIKO-SEM Field Effect Transistor PDFN 3x3S Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 : G1 9m Q2 30V 34A 2,3,4 : D15,6,7 : S2 8 : G2 Q1 30V 10.5m 31A 9 : S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSDrain-Source Voltage VDS 30 30 V

Datasheet: PE606BA , PE610SA , PE614DX , PE616BA , PE618BA , PE618DT , PE632BA , PE636BA , 18N50 , APM2318A , APM3055L , APM4008NG , APM4008NU , APM4010NU , APM4012NU , APM4015K , APM4015PU .

History: 25N10G-TM3-T | APT4080BN

Keywords - PE642DT MOSFET datasheet

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