APM3055L
MOSFET. Datasheet pdf. Equivalent
Type Designator: APM3055L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.5
nC
trⓘ - Rise Time: 17
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO252
SOT223
APM3055L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APM3055L
Datasheet (PDF)
..1. Size:310K anpec
apm3055l.pdf 
APM3055LN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/12A, RDS(ON)=100m(max) @ VGS=10VRDS(ON)=200m(max) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability 1 2 31 2 3 TO-252 and SOT-223 PackagesG D SG D SApplications Top View of TO-252 Top View
0.1. Size:843K cn vbsemi
apm3055luc.pdf
APM3055LUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABS
8.1. Size:1441K cn vbsemi
apm3054nuc.pdf
APM3054NUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABS
9.1. Size:723K anpec
apm3009n.pdf
APM3009N N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A , RDS(ON)=7m(typ.) @ VGS=10VRDS(ON)=11m(typ.) @ VGS=4.5V Super High Dense Advanced Cell Design forExtremely Low RDS(ON) Reliable and Rugged1 2 3 TO-220 , TO-252 and TO-263 PackagesG D SApplications Top View of TO-220, TO
9.2. Size:184K anpec
apm3095pu.pdf
APM3095PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A, RDS(ON)=95m (typ.) @ VGS=-10VG D RDS(ON)=140m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Power Management in Desktop Computer orG DC/DC ConvertersDP-Channel MOSFETOrdering and
9.3. Size:212K anpec
apm3023n.pdf
APM3023N N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/30A, RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=22m(typ.) @ VGS=5V Super High Dense Cell Design1 2 31 2 3 High Power and Current Handling CapabilityG D S TO-252.TO-220 and SOT-223 Packages G D S Top View of SOT-223 Top View of TO-25
9.4. Size:173K sino
apm3095pu.pdf
APM3095PU P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A,D RDS(ON)=95m (typ.) @ VGS=-10VSRDS(ON)=140m (typ.) @ VGS=-4.5VG 100% UIS + Rg Tested Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)D ESD ProtectionApplicationsG Power Management in Desktop Computer or DC/DC Converters.
9.5. Size:1438K cn vbsemi
apm3040ndc.pdf
APM3040NDCwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis
9.6. Size:845K cn vbsemi
apm3009nuc.pdf
APM3009NUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO
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