All MOSFET. APM4101K Datasheet

 

APM4101K Datasheet and Replacement


   Type Designator: APM4101K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8
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APM4101K Datasheet (PDF)

 ..1. Size:205K  anpec
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APM4101K

APM4101KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 40V/9A,D2D2RDS(ON)= 12m (typ.) @ VGS=10VRDS(ON)= 20m (typ.) @ VGS=5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)D1 D1 D2 D2ApplicationsG1 G2 Power Management in LCD Monitor/TV Inverter.

 9.1. Size:206K  anpec
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APM4101K

APM4115PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-45A, RDS(ON)= 12.5m (typ.) @ VGS=-10VDG RDS(ON)= 18.5m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available (RoHSSCompliant)ApplicationsG Power Management in LCD TV InverterDP-Channel MOSFETOrderin

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History: ALD1103DB | SQ9407EY-T1 | CHM85A3PAGP | SML100L16 | SFFX054Z | TK7P65W

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