IRF430 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF430
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 610 pF
Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm
Package: TO3
IRF430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF430 PDF doc:
1.1. irf430.pdf 
Size:141K _fairchild_semi
1.2. 2n6762_irf430.pdf Size:146K _international_rectifier
PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET?TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 ? 4.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi
1.3. irf430-3.pdf Size:56K _intersil
IRF430 Data Sheet March 1999 File Number 1572.4 4.5A, 500V, 1.500 Ohm, N-Channel Features Power MOSFET • 4.5A, 500V This N-Channel enhancement mode silicon gate power field • rDS(ON) = 1.500? effect transistor is an advanced power MOSFET designed, • Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera
Datasheet: IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF9Z34 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L .
