All MOSFET. IRF430 Datasheet

 

IRF430 Datasheet and Replacement


   Type Designator: IRF430
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 40(max) nC
   tr ⓘ - Rise Time: 40(max) nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO3

 IRF430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF430 Datasheet (PDF)

 ..1. Size:146K  international rectifier
 2n6762 irf430.pdf pdf_icon

IRF430

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces

 ..2. Size:141K  fairchild semi
 irf430.pdf pdf_icon

IRF430

 ..3. Size:211K  samsung
 irf430 irf431 irf432 irf433.pdf pdf_icon

IRF430

 ..4. Size:222K  inchange semiconductor
 irf430.pdf pdf_icon

IRF430

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF430 DESCRIPTION silicon Gate for fast switching at elevate rugged low drive requirements ease of paralleling Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. A

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Datasheet: IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , STP65NF06 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L .

Keywords - IRF430 MOSFET datasheet

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