IRF430 Datasheet. Specs and Replacement

Type Designator: IRF430  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 max nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO3

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IRF430 substitution

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IRF430 datasheet

 ..1. Size:146K  international rectifier
 2n6762 irf430.pdf pdf_icon

IRF430

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

 ..2. Size:141K  fairchild semi
 irf430.pdf pdf_icon

IRF430

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 ..3. Size:211K  samsung
 irf430 irf431 irf432 irf433.pdf pdf_icon

IRF430

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 ..4. Size:222K  inchange semiconductor
 irf430.pdf pdf_icon

IRF430

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF430 DESCRIPTION silicon Gate for fast switching at elevate rugged low drive requirements ease of paralleling Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. A... See More ⇒

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Detailed specifications: IRF3415L, IRF3415S, IRF350, IRF3515S, IRF360, IRF3710, IRF3710L, IRF3710S, 2N60, IRF440, IRF450, IRF451, IRF452, IRF453, IRF460, IRF4905, IRF4905L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.