IRF430 MOSFET Datasheet: N-Ch, 500V, 4.5A. Full specification with pinout and replacement list

IRF430 Specs and Replacement

   Type Designator: IRF430
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 40(max) nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO3

IRF430 substitution

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IRF430 datasheet

..1. Size:146K international rectifier
2n6762 irf430.pdf pdf_icon

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

..2. Size:141K fairchild semi
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..3. Size:211K samsung
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..4. Size:222K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF430 DESCRIPTION silicon Gate for fast switching at elevate rugged low drive requirements ease of paralleling Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. A... See More ⇒