IRF430 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF430
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40(max) nC
trⓘ - Rise Time: 40(max) nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO3
IRF430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF430 Datasheet (PDF)
2n6762 irf430.pdf
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PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces
irf430.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF430DESCRIPTIONsilicon Gate for fast switching at elevateruggedlow drive requirementsease of parallelingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed applications such asSwitching power supplies,AC and DCmotor controlsrelay and solenoid driver.A
irf430-3.pdf
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IRF430Data Sheet March 1999 File Number 1572.44.5A, 500V, 1.500 Ohm, N-Channel FeaturesPower MOSFET 4.5A, 500VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 1.500effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mo
Datasheet: IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , NCEP85T25VD , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L .
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