All MOSFET. 2015 Datasheet

 

2015 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2015

SMD Transistor Code: A1T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 2.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6.4 nS

Drain-Source Capacitance (Cd): 62 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: SOT23

2015 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2015 Datasheet (PDF)

1.1. 2n2015.pdf Size:270K _rca

2015

1.2. lj2015-52.pdf Size:105K _upd

2015
2015

锦州辽晶电子科技有限公司 LJ2015-52 FD75C 型 NPN 硅功率达林顿晶体管 参数符号 测试条件 规范值 单位 P T =25℃ 75 W CM C 极 I 10 A CM 限 T 150 ℃ jm 值 T -55~150 ℃ stg V I =2mA ≥50 V (BR)CBO CB V I =2mA ≥50 V (BR)CEO CE I V =20V ≤2 mA CBO CB 直 I V =20V ≤2 mA CEO EB 流 参 V ≤2.5 V BEsat 数 I =5A C I =0.5A B

 1.3. lwe2015r 2.pdf Size:62K _philips

2015
2015

DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Semiconductors Product specification NPN microwave power transistor LWE2015R FEATURES PINNING - SOT446A Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emit

1.4. ftd2015.pdf Size:41K _sanyo

2015
2015

Ordering number:ENN6393 N-Channel Silicon MOSFET FTD2015 Load Switching Applications Features Package Dimensions Low ON resistance. unit:mm 4V drive. 2155A Mounting height 1.1mm. [FTD2015] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 : Drain1 2 : Source1 1 4 3 : Source1 0.125 4 : Gate1 0.25 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2

 1.5. 2sa2015.pdf Size:49K _sanyo

2015
2015

Ordering number:ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2015/2SC5568] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

1.6. fts2015.pdf Size:28K _sanyo

2015
2015

Ordering number : ENN6667 FTS2015 N-Channel Silicon MOSFET FTS2015 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm 2.5V drive. 2147A Mount height 1.1mm. [FTS2015] 3.0 0.425 0.65 8 5 1 : Drain 2 : Source 3 : Source 1 4 0.125 4 : Gate 0.25 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8 Specifications Absolute M

1.7. 2sk2015.pdf Size:33K _panasonic

2015
2015

Power F-MOS FETs 2SK2015 2SK2015 Silicon N-Channel Power F-MOS Unit : mm 6.5 0.1 Features 5.3 0.1 Low ON-resistance RDS(on) : RDS(on)1= 0.7?(typ) 4.35 0.1 3.0 0.1 High-speed switching : tf= 36ns(typ) No secondary breakdown For low-voltage drive(VGS= 4V) Taping supply possible Applications 1.0 0.1 DC-DC converter 0.85 0.1 0.75 0.1 0.5 0.1 Non-contact relay 4.6 0.1 0.05

1.8. 2sd2015.pdf Size:72K _jmnic

2015
2015

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2015 DESCRIPTION ·With TO-220F package ·DARLINGTON APPLICATIONS ·Driver for solenoid ·Relay and motor ·General purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

1.9. kta2015.pdf Size:36K _kec

2015
2015

SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS ·Excellent hFE Linearity _ A + 2.00 0.20 D 2 : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. _ + B 1.25 0.15 _ + C 0.90 0.10 ·Complementary to KTC4076. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.3

1.10. 2sd2015.pdf Size:26K _sanken-ele

2015

Equivalent C circuit B Darlington 2SD2015 (3k?) (500?) E Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol Conditions 2SD2015 Symbol 2SD2015 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCB=150V 10max A

1.11. 2sd2015.pdf Size:114K _inchange_semiconductor

2015
2015

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2015 DESCRIPTION Ў¤ With TO-220F package Ў¤ DARLINGTON APPLICATIONS Ў¤ Driver for solenoid,relay and motor and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO

1.12. kta2015.pdf Size:510K _htsemi

2015

KTA2015 TRANSISTOR (PNP) FEATURES ? Excellent hFE Linearity SOT–323 ? Complementary to KTC4076 APPLICATIONS ? General Purpose Switching MAXIMUM RATINGS (Ta=25? unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO 3. COLLECTOR VCEO Collector-Emitter Voltage -30 V V Emitter-Base Voltage -5 V EBO I Collector Curr

1.13. kta2015.pdf Size:66K _wietron

2015
2015

KTA2015 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit VCBO Collector-Base Voltage -35 V Collector-Emitter Voltage VCEO -30 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA Total Device Dissipation PD 100 mW T =25°C A Tj °C Junction Temperature +150 Tstg Storage Temperature -

1.14. wpm2015.pdf Size:377K _willsemi

2015
2015

WPM2015 WPM2015 Http://www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D 3 The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12 in DC-D

1.15. sspl2015.pdf Size:571K _silikron

2015
2015

 SSPL2015 Main Product Characteristics: VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.16. sspl2015d.pdf Size:563K _silikron

2015
2015

 SSPL2015D Main Product Characteristics VDSS 200V RDS(on) 0.13Ω(typ.) ID 18A ① Schematic Diagram TO-252 Marking a nd P in Assignment Features and Benefits  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery Descri

1.17. sspl2015f.pdf Size:531K _silikron

2015
2015

 SSPL2015F Main Product Characteristics VDSS 200V RDS(on) 0.13Ω(typ.) ID 18A ① Marking and P in Schematic Diagram TO-220F Assignment Features and Benefits  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  17

1.18. wpm2015.pdf Size:84K _tysemi

2015
2015

Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power s

1.19. wpm2015.pdf Size:1569K _kexin

2015
2015

SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-20V ● ID =-2.4 A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● RDS(ON) < 110mΩ (VGS =-4.5V) +0.1 1.9-0.1 ● RDS(ON) < 150mΩ (VGS =-2.5V) ● Supper high density cell design 1. Gate 2. Source D 3. Drain 3 1 2 G S ■ Absolute Maximum Rating

1.20. kta2015.pdf Size:1010K _kexin

2015
2015

SMD Type Transistors PNP Transistors KTA2015 ■ Features ● Excellent hFE Linearity ● Complementary to KTC4076 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Base Current IB

1.21. 2015.pdf Size:392K _shenzhen-tuofeng-semi

2015
2015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D The 2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC

Datasheet: APM9968C , APM9968CO , APM9984CCG , APM9986CO , APM9988CO , APM9988QA , SIR164DP , 1481 , IRFP450 , 2016 , 2021 , 2026 , 2341 , 4401 , 4402 , 4407 , 4409 .

 
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