4435 Datasheet and Replacement

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4435P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Advanced High Cell Density ProcessAvailableD Lead (Pb)-Free Version is RoHS0.020 @ VGS = -10 V-8.0Compliant-30-300.030 @ VGS = -4.5 V -5.0APPLICATIONSD Load SwitchesD Battery SwitchSSO-8SD1 8G

GOFORD4435DDESCRIPTION The 4435 uses ad vanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-4.5V -10V (Typ)m m-30V 21 15.5 -9.1 A High Power and current handing capability Lead free product is acquired M

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 4435P-Channel Enhancement Mode Power MOSFET SOP-8Description SD1 8The 4435 uses advanced trench technology to provide S D2 7excellent RDS(ON), low gate charge and operation with gate SD3 6G Dvoltages as low as 4.5V. 4 5Top ViewGeneral Features Equivalent Cir cuitS VDS =

PD- 94243IRF4435HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon ar

PD- 93768ASi4435DYHEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon

Ordering number:EN3791NPN Triple Diffused Planar Silicon Transistor2SC4435Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Fast switching speed (tf=300ns max).unit:mm High brocking voltage (VCBO=1500V).2022A High reliability (Adoption of HVP process).[2SC4435] Adoption of MBIT process.15.63.24.814.

September 2010FDMC4435BZP-Channel Power Trench MOSFET -30 V, -18 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.3 Abeen especially tailored to minimize the on-state resistance. This E

March 2011FDMS4435BZP-Channel PowerTrench MOSFET -30 V, -18 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = -10 V, ID = -9.0 AThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.5 A Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This Exte

October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave

July 2009FDS4435BZ_F085P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to mi

October 2001 SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave

October 2001FDS4435AP-Channel Logic Level PowerTrench MOSFET General DescriptionFeaturesThis P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 VFairchild Semiconductors advanced PowerTrench processRDS(ON) = 0.025 W @ VGS = -4.5 Vthat has been especially tailored to minimize the on-stateresistance and yet maintain low gate charg

April 2009FDS4435BZP-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimi

PD- 93768ASi4435DYHEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon

SQ4435EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.018 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.031 AEC-Q101 QualifiedcID (A) - 15 100 % Rg and UIS TestedConfiguration Single Complian

New ProductSi4435DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET0.024 at VGS = - 10 V - 11.4- 30 15 nC Compliant to RoHS Directive 2002/95/EC0.035 at VGS = - 4.5 V - 9.4APPLICATIONS Load Switches Battery Swit

New ProductSi4435DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET0.024 at VGS = - 10 V - 11.4- 30 15 nC Compliant to RoHS Directive 2002/95/EC0.035 at VGS = - 4.5 V - 9.4APPLICATIONS Load Switches Battery Swit

Si4435DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD Lead (Pb)-Free Version is RoHSVDS (V) rDS(on) (W) ID (A)Compliant0.02 @ VGS = 10 V 8.030300.035 @ VGS = 4.5 V 6.0SSO-8SD1 8GS D2 7SD3 6G D4 5DTop ViewP-Channel MOSFETOrdering Information: Si4435DY-T1REV ASi4435DY-T1AE3 (Lead (Pb)-Free)ABSOLU

PD- 95133Si4435DYPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resis

Si4435FDYwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen III p-channel power MOSFETD 5D 6 100% Rg testedD 7 Material categorization: 8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONSSG33 Adapter switchSS22SS11 Load switchSTop View DC

Si4435BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = - 10 V - 9.1 TrenchFET Power MOSFET- 300.035 at VGS = - 4.5 V Advanced High Cell Density Process- 6.9 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches B

DMG4435SSSP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagram

PD- 95133Si4435DYPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resis

FDMC4435BZP-Channel Power Trench MOSFET-30 V, -18 A, 20 mGeneral DescriptionFeaturesThis P-Channel MOSFET is produced using ON Max rDS(on) = 20 m at VGS = -10 V, ID = -8.5 ASemiconductors advanced Power Trench process that has Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.3 Abeen especially tailored to minimize the on-state resistance. This device is well suited

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD UT4435 Power MOSFET 30V P-CHANNEL POWER MOSFET DESCRIPTION The UT4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SOP-8 FEATURES * RDS(ON)20m @VGS=-10V * RDS(ON) 35m @VGS=-4.5V * L

SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best B combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universal

TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 21 @ VGS = -10V -9.1 4. Gate -30 35 @ VGS = -4.5V -6.9 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Ba

TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 3. Source 6. Drain 21 @ VGS = -10V -9.1 4. Gate 5. Drain -30 35 @ VGS = -4.5V -6.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conv

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m@-9.1A-30V 35m@ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is idea

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYPV(BR)DSS SOP818m@-10V -30V -7.3A26m@ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4435 P-Channel 30-V(D-S) MOSFET TO-251-3L FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. DRAIN 3. SOURCE Load Switch Battery Switch Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage

PT443530V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18m RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D D D8 7 6 51 2 3 4S S S GMillimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80

CET4435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -8.8A, RDS(ON) = 24m @VGS = -10V. RDS(ON) = 35m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-

CEM4435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -8A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 33m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

WTK4435Surface Mount P-ChannelEnhancement Mode MOSFETDRAIN CURRENTP b Lead(Pb)-Free-8 AMPERESDRAIN SOURCE VOLTAGE-30 VOLTAGEFeatures:* Super high dense* Cell design for low RDS(ON)* R

Spec. No. : MOS200101) HI-SINCERITY Issued Date : 2008.01.12 Revised Date :2009.02.06 MICROELECTRONICS CORP. Page No. : 1/5 H4435S 8-Lead Plastic SO-8 Package Code: S P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) H4435S Symbol & Pin Assignment Features 5 4Pin 1 / 2 / 3: Source 6 3Pin 4: Gate 7 2 RDS(on)=20m@VGS=-10V, ID=-9.1A Pin 5 / 6 / 7 / 8: Dr

AO443530V P-Channel MOSFETGeneral Description Product SummaryThe AO4435 uses advanced trench technology to VDS = -30Vprovide excellent RDS(ON), and ultra-low low gate chargeID = -10.5A (VGS = -20V)with a 25V gate rating. This device is suitable for use asRDS(ON)

AP4435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 20mD Fast Switching Characteristic ID -9AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

AP4435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AGSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDS TO-252(H)surface mount applications and suited for low voltag

AP4435GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

AP4435GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching Characteristic ID -9AGSSSO-8 SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d

AP4435GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -11AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device des

AFP4435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

AFP4435 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435, P-Channel enhancement mode -30V/-10A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

AFP4435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

AFP4435W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=30m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

Spec. No. : C391V8 Issued Date : 2012.09.28 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4435V8 ID -40A10.3m(typ.) RDSON(MAX)@VGS=-10V, ID=-10A 15m(typ.) RDSON(MAX)@VGS=-5V, ID=-7A Description The MTP4435V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

Spec. No. : C107Q8 Issued Date : 2015.08.14 CYStech Electronics Corp. Revised Date : 2015.12.15 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP4435AQ8 ID@ VGS=-10V, TA=25C -12.3A 12.3m(typ.) RDSON @VGS=-10V, ID=-8A 17.5m(typ.) RDSON @VGS=-4.5V, ID=-5A Features Simple drive requirement Low on-resistance Fast switching speed

Spec. No. : C391Q8-A Issued Date : 2008.07.17 CYStech Electronics Corp.Revised Date : 2014.03.05 Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMEP4435Q8 ID -13A9.3m(typ.) RDSON(MAX)@VGS=-10V, ID=-10A 14m(typ.) RDSON(MAX)@VGS=-5V, ID=-7A 15m(typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MEP4435Q8 is a P-channel enhancement-mode MOSFE

APM4435K P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A , RDS(ON)=16m(typ.) @ VGS=-10V RDS(ON)=24m(typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 SOP-8 Package(1, 2, 3)S S S Lead Free Available (RoHS Compliant)Applications(4)G Power Management in Notebook Computer, Portable Equipment and Batte

GreenProductS TM4435S amHop Microelectronics C orp.J AN.20 2006P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VG S = -10V-30V -8AS urface Mount Package.33 @ VG S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE M

BRCS4435SC Rev.D Oct.-2018 DATA SHEET / Descriptions SOP-8 P MOS P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS (V) = -30V ID = -8.8 A RDS(ON)

SEMICONDUCTOR FTK4435TECHNICAL DATA DDESCRIPTION The FTK4435 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -9.1A RDS(ON)

SMD Type MOSFETSMD TypeP-Channel MOSFETSI4435DY (KI4435DY)SOP-8 Features VDS=-30V RDS(on)=0.02@VGS=-10V1.50 0.15 RDS(on)=0.035@VGS=-4.5VSS D1 8GS D2 7S D3 6G D4 5DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VContinuous Drain Current ID

SMD Type MOSFETP-Channel MOSFETAO4435 (KO4435)SOP-8 Features VDS (V) =-30V ID =-10.5 A (VGS =-20V)1.50 0.15 RDS(ON) 14m (VGS =-20V) RDS(ON) 18m (VGS =-10V)1 Source 5 Drain RDS(ON) 36m (VGS =-5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

SMD Type MOSFETSMD TypeP-Channel MOSFETSI4435DY (KI4435DY)SOP-8 Features VDS=-30V RDS(on)=0.02@VGS=-10V1.50 0.15 RDS(on)=0.035@VGS=-4.5VSS D1 8GS D2 7S D3 6G D4 5DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VContinuous Drain Current ID

AiT Semiconductor Inc. AM4435 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement -30V/-8.0A, R =16m(typ)@V =-10V DS(ON) GSmode power field effect transistor is produced -30V/-5.0A, R =26m(typ)@V =-4.5V DS(ON) GSusing high cell density. Advanced trench Super high density cell design for extremel

Pb Free Product BLM4435 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4435 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -10A DS DR

CHENMKO ENTERPRISE CO.,LTDCHM4435AJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and reli

CHENMKO ENTERPRISE CO.,LTDCHM4435BJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and reli

CHENMKO ENTERPRISE CO.,LTDCHM4435AZGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. (SOT-223 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.052.0+

GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-

GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo

GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

ME4435/ME4435-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4435 is the P-Channel logic enhancement mode power field RDS(ON)22m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)35m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

MMP4435BDYPackage Data SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-9.1A = 20mRDS(ON), Vgs@-4.5V, Ids@-6.9A = 35mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteri

Pb Free ProductNCE4435NCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE4435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = -30V,ID = -9.1A RDS(ON)

http://www.ncepower.com NCE4435XNCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -10A RDS(ON)

http://www.ncepower.comNCE4435BNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4435B uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR

STP4435 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP4435 is the P-Channel logic enhancement -30V/-10.0A, RDS(ON) =15m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-6.0A, RDS(ON) =25m(typ)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON). Super high density cell design

SSM4435MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VDDLow on-resistance D R 20mDS(ON)DFast switching ID -8AGSSSO-8 SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe SO-8 package is widely

SL4435A -30V/-10A P-Channel MOSFETFeaturesProduct Summary Trench Power LV MOSFET technologyVDS RDS(ON) MAX ID MAX High density cell design for Low RDS(ON)18m@10VD2S1-30V -10.5A High Speed switching D130m@4.5VDDDApplicationD Battery protection Power managementS Load switchSSGD D D DSOP-8 top view Schematic diagram4435: Dev

STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, note

STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebo

AS4435S P-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 20m@-10V -30V -11A 35m@-4.5V Feature Application Advanced trench process technology Load Switch High Density Cell Design For Ultra Low Battery Switch On-Resistance Power management Package Circuit diagram SOP-8 Marking D D D D 4435 XXXXX S S S G Document ID Issued Date Revi

Eternal Semiconductor Inc. ET4435P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP16 @ VGS = -10V ,ID=-9.1A-30 -9.121 @ VGS = -4.5V,ID=-6.9AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Ordering information ET4435LeadPb-free and halogen-f

HSM4435 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4435 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 18 m gate charge for most of the synchronous buck converter applications. ID -9.5 A The HSM4435 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

JST4435-30V P-Channel MosfetSOP-8FEATURESRDS(ON) 23m @VGS=-10VRDS(ON)34m @VGS=-4.5VAPPLICATIONSLoad SwitchPower ManagementMARKING P-CHANNEL MOSFETYYMM:Date Code(year&month)Absolute Maximum Ratings (T =25 unless otherwise specified)CSymbol Param Max. UnitsbolV Drain-Source Voltage -30 VDSSV Gate-Source Voltage 20 VGSST = 25 -10 AC I

PT4435 -30V P-Channel Enhancement Mode MOSFETVDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18m RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D D D8 7 6 51 2 3 S S S GMillimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80

WSP4435AP-Ch MOSFETGeneral Description Product SummeryThe WSP4435A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON 20m-30V -8Aand gate charge for most of the synchronous buck converter applications . Applications The WSP4435A meet the RoHS and Green Product requirement , 100% EAS High Fre

WSP4435 P-Ch MOSFETGeneral Description Product SummeryThe WSP4435 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON 16m-30V -8.2Aand gate charge for most of the synchronous buck converter applications . Applications The WSP4435 meet the RoHS and Green Product requirement , 100% EAS guaranteed

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE4435 30V P-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide RDS(ON)

SM4435P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 20 @ VGS = -10V ,ID=-9.1A -30V -9.1A 35 @ VGS = -4.5V,ID=-6.9A Features 1Advanced Trench Process Technology. 2High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired3 . 4Surface mount Package. 5RoHS Compliant. Pin 1 / 2 / 3:

MT4435ACTRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

FDS4435-NLwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

VBZA4435www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

AP4435GJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.022 at VGS = - 4.5 V - 35APPLICATIONSTO-251 Load SwitchS Battery SwitchGDP-Channel MOSFETG D STop

SQ4435EYwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

IM4435Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

FDS4435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

GF4435www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

CET4435Awww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS

AP4435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

CEM4435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

IRF4435TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

FDS4435BZwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

SI4435DY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3

SI4435BDYwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

HM4435BP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM4435B uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -9.1A RDS(ON)

HM4435P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM4435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -9.1A RDS(ON)