1002 MOSFET. Datasheet pdf. Equivalent

Type Designator: 1002

SMD Transistor Code: 1002

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.1 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 22 pF

Maximum Drain-Source On-State Resistance (Rds): 0.22 Ohm

Package: SOT23

1002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1002 Datasheet (PDF)

1.1. mrf1002mb.pdf Size:240K _update

HG RF POWER TRANSISTOR MRF1002MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ω Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB ω 100% Tested for Load Mismatch at All Phase Angles with 10:1

1.2. mrf1002ma.pdf Size:240K _update

HG RF POWER TRANSISTOR MRF1002MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ω Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB ω 100% Tested for Load Mismatch at All Phase Angles with 10:1

1.3. phpt61002nyc.pdf Size:283K _upd

PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Print

1.4. phpt61002pyc.pdf Size:284K _upd

PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C �

1.5. st1002.pdf Size:715K _upd

ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo

1.6. sradm1002.pdf Size:174K _upd

SENSITRON SRADM1002 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5311, REV. A HERMETIC RAD HARD POWER MOSFET N-CHANNEL QUAD FEATURES:  Four 250 Volt, 0.36 Ohm, 4.4A RAD HARD MOSFETs  Single Event Effect (SEE) hardened, LET 55, Range: 90μm o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V  Total Ionization Dose (TID) hardened, 100kRad (Level R)  Fast Switching

1.7. sef401002.pdf Size:224K _upd-mosfet

SEMITRONICS CORP. SEF401002 64 Commercial Street, Freeport, N.Y. 11520 POWER MOSFET Phone: (516) 623-9400 • Fax. (516) 623-6954 FEATURES PACKAGE • Isolated Case • Hermetically Sealed Package • Fast Switching • Low RDS(on) 0.025 Ohms • High Current & High Power • MIL STX Screening Available APPLICATIONS • High Reliability Power Supplies CASE OUT

1.8. haf1002l haf1002s.pdf Size:200K _update_mosfet

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.9. mj10022r.pdf Size:300K _motorola

Order this document MOTOROLA by MJ10022/D SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Designer's? Data Sheet SWITCHMODE Series 40 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DARLINGTON Transistors with Base-Emitter TRANSISTORS 350 AND 400 VOLTS Speedup Diode 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high�voltage, high�speed, power switch

1.10. mj10020r.pdf Size:293K _motorola

Order this document MOTOROLA by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 Designer's? Data Sheet SWITCHMODE Series 60 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DARLINGTON Transistors with Base-Emitter TRANSISTORS 200 AND 250 VOLTS Speedup Diode 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high�voltage, high�speed, power switch

1.11. mrf1002m.pdf Size:109K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line Microwave Pulse MRF1002MA Power Transistors MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. � Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak 2.0 W (PEAK), 960�1215 MHz Minimum Gain

1.12. msc81002.pdf Size:101K _st

MSC81002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .EMITTER BALLASTED .VSWR CAPABILITY :1 @ RATED ? CONDITIONS .HERMETIC STRIPAC? PACKAGE .P 2.0 W MIN. WITH 10 dB GAIN @ OUT = 1 GHz .230 2L STUD (S016) hermetically sealed ORDER CODE BRANDING MSC81002 81002 PIN CONNECTION DESCRIPTION The MSC81002 is a common base hermetically sealed silicon NPN microwave tr

1.13. tk4p50d 100225.pdf Size:210K _toshiba

TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK4P50D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.7 ? (typ.) 6.6 ± 0.2 5.34 ± 0.13 0.58MAX • High forward transfer admittance: ?Yfs? = 1.5 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 500 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS

1.14. ssm6n35fu 100201.pdf Size:186K _toshiba

SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FU Unit: mm 0 High-Speed Switching Applications 0 Analog Switch Applications • 1.2-V drive • N-ch 2-in-1 • Low ON-resistance RDS(ON) = 20 ? (max) (@VGS = 1.2 V) RDS(ON) = 8 ? (max) (@VGS = 1.5 V) RDS(ON) = 4 ? (max) (@VGS = 2.5 V) RDS(ON) = 3 ? (max) (@VGS = 4.0 V) Absolute Maximum Ratings

1.15. tk4a65da 100225.pdf Size:204K _toshiba

TK4A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK4A65DA Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 1.6 ?(typ.) • High forward transfer admittance: |Yfs| = 1.9 S (typ.) • Low leakage current: IDSS = 10 ?A(max) (VDS = 650 V) • Enhancement mode: Vth = 2.4 to

1.16. mt3s03au 100217.pdf Size:111K _toshiba

MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure: NF = 1.4dB (f = 2 GHz) • High gain: Gain = 8dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 2

1.17. tk5a60d 100226.pdf Size:212K _toshiba

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK5A60D Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 1.2 ? (typ.) • High forward transfer admittance: ?Yfs? = 3.0 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.4 t

1.18. tk4p55d 100225.pdf Size:208K _toshiba

TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK4P55D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.5 ? (typ.) 6.6 ± 0.2 5.34 ± 0.13 0.58MAX • High forward transfer admittance: ?Yfs? = 2.0 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 550 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS

1.19. tk2p60d 100225.pdf Size:209K _toshiba

TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK2P60D Switching Regulator Applications Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. • Low drain-source ON-resistance: RDS (ON) = 3.3 ? (typ.) • High forward transfer admittance: ?Yfs? = 1.0 S (typ.) • Low leakage current: IDSS = 10 ?A (VDS = 600 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 1

1.20. tk4p60db 100225.pdf Size:208K _toshiba

TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK4P60DB Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.6 ? (typ.) 6.6 ± 0.2 5.34 ± 0.13 0.58MAX • High forward transfer admittance: ?Yfs? = 2.2 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VD

1.21. ssm6l12tu 100215.pdf Size:233K _toshiba

SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 180m? (max) (@VGS = 2.5 V) Unit: mm Q2: RDS(ON) = 430m? (max) (@VGS = -2.5 V) 2.1±0.1 1.7±0.1 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Uni

1.22. tpc6109-h en datasheet 100201.pdf Size:260K _toshiba2

TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications Unit: mm � Small footprint due to small and thin package � Low drain-source ON-resistance: RDS (ON) = 44 m? (typ.) (VDS = -10 V) � High forward transfer admittance: |Yfs| = 8.0 S (typ.) � Low leakage current: IDSS = -10 ?A (max) (

1.23. tpc6011 en datasheet 100215.pdf Size:212K _toshiba2

TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications Unit: mm � Low drain-source ON-resistance: RDS (ON) = 16 m? (typ.) ( VGS = 10V) � Low leakage current: IDSS = 10 ?A (max) (VDS = 30 V) � Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25�C) Ch

1.24. tpcp8404 en datasheet 100201.pdf Size:286K _toshiba2

TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO?/U-MOS?) TPCP8404 Portable Equipment Applications Motor Drive Applications Unit: mm 0.33�0.05 � Low drain-source ON-resistance : P Channel RDS (ON) = 38 m?(typ.) 0.05 M A 8 5 (VGS=-10V) N Channel RDS (ON) = 38 m?(typ.) (VGS=10V) � High forward transfer admittance : P Channel |Yfs| = 7.3 S (typ.)

1.25. tk80f08k3 en datasheet 100202.pdf Size:214K _toshiba2

TK80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK80F08K3 Swiching Regulator Unit: mm � Low drain-source ON-resistance: RDS (ON) = 3.4 m? (typ.) 10.0 � 0.3 � Low leakage current: IDSS = 10 ?A (max) (VDS = 75 V) 0.4 � 0.1 9.5 � 0.2 � Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25�C) 1.1 0.76 � 0.

1.26. tta007 en datasheet 100208.pdf Size:198K _toshiba2

TTA007 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications � High DC current gain : hFE = 200 to 500 (IC = -0.1 A) � Low collector-emitter saturation voltage : VCE(sat) = -0.2 V (max) � High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collect

1.27. ttc007 en datasheet 100208.pdf Size:194K _toshiba2

TTC007 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications � High DC current gain: hFE = 400 to1000 (IC = 0.1 A) � Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) � High-speed switching : tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-

1.28. fts1002.pdf Size:44K _sanyo

Ordering number:EN5887 P-Channel Silicon MOSFET FTS1002 DC-DC Converter Applications Features Package Dimensions � Low ON Resistance. unit:mm � 4V drive. 2147 � Mount height 1.1mm. [FTS1002] 3.0 0.975 0.65 8 5 1:Drain 2:Source 3:Source 4:Gate 5:Drain 1 4 6:Source 0.125 0.25 7:Source 8:Drain SANYO:TSSOP8 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter

1.29. rej03g1601 h7p1002dldsds.pdf Size:131K _renesas

1.30. rej03g1002 2sk2202ds.pdf Size:95K _renesas

1.31. rej03g1131 h7n1002ldlslmds.pdf Size:154K _renesas

1.32. rej03g0660 2sb1002ds-1.pdf Size:76K _renesas

1.33. rej03g0130 h7n1002ab.pdf Size:222K _renesas

1.34. fdy1002pz.pdf Size:267K _fairchild_semi

October 2008 FDY1002PZ Dual P-Channel (�1.5 V) Specified PowerTrench� MOSFET �20 V, �0.83 A, 0.5 ? Features General Description Max rDS(on) = 0.5 ? at VGS = �4.5 V, ID = �0.83 A This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor�s advanced Power Trench process to Max rDS(on) = 0.7 ? at VGS = �2.5 V, ID = �0.70 A optimize the rDS(on)@VGS = �1.5 V. Max rDS(on)

1.35. ksr1002.pdf Size:43K _samsung

KSR1002 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 � Switching circuit, Inverter, Interface circuit, Driver Circuit � Built in bias Resistor (R1=10 , R2=10 ) � Complement to KSR2002 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEB

1.36. si1002r.pdf Size:188K _vishay

Si1002R www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) RDS(on) (Ω) MAX. ID (A) Qg (TYP.) • 100 % Rg tested 0.560 at VGS = 4.5 V 0.5 • Gate-source ESD protected: 1000 V 0.620 at VGS = 2.5 V 0.2 30 0.72 nC • Material categorization: 0.700 at VGS = 1.8 V 0.2 For definitions of compliance please see 1.

1.37. nstb1002dxv5-d.pdf Size:63K _onsemi

NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 The BRT (Bias Resistor Transistor) contains a single transistor with R2 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter re

1.38. nstb1002dxv5.pdf Size:63K _onsemi

1.39. apt1002r4bn.pdf Size:50K _apt

D TO-247 G APT1002RBN 1000V 7.0A 2.00Ω S APT1002R4BN 1000V 6.5A 2.40Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 1002RBN 1002R4BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25°C 7.0 6.5 Amps IDM Pulsed Drain Current 1

1.40. apt10025jlc.pdf Size:34K _apt

APT10025JLC 1000V 34A 0.250W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

1.41. apt10025jvr.pdf Size:71K _apt

APT10025JVR 1000V 34A 0.250Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

1.42. apt10025pvr.pdf Size:35K _apt

APT10025PVR 1000V 33A 0.250Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

1.43. apt1002rcn.pdf Size:49K _apt

D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT1002RCN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 5.5 Amps IDM Pulsed Drain Current 1 22 VGS Gate-Source Voltage ±30 Volts Total Powe

1.44. apt10026jll.pdf Size:69K _apt

APT10026JLL 1000V 30A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

1.45. apt10021jfll.pdf Size:71K _apt

APT10021JFLL 1000V 37A 0.210W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

1.46. apt10026l2fl.pdf Size:65K _apt

APT10026L2FLL 1000V 38A 0.260W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speed

1.47. apt10025jvfr.pdf Size:73K _apt

APT10025JVFR 1000V 34A 0.250Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode �

1.48. apt10026l2fll.pdf Size:65K _apt

1.49. apt10026jfll.pdf Size:71K _apt

APT10026JFLL 1000V 30A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

1.50. apt10026jn.pdf Size:63K _apt

D G APT10026JN 1000V 33A 0.26Ω S "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 10026JN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 33 Amps IDM, lLM Pulse

1.51. apt10021jll.pdf Size:69K _apt

APT10021JLL 1000V 37A 0.210W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

1.52. apt10026l2ll.pdf Size:64K _apt

APT10026L2LL 1000V 38A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

1.53. suf1002.pdf Size:347K _auk

SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features ? Low drain-source On-resistance: RDS(on)=24m? @VGS=10V, ID=2.9A ? Low gate charge: Qg=79.5nC (Typ.) ? High power and current handing capability ? Lead free product is acquired SOP-8 Ordering Information Part Number Marking Code Package Packaging SUF1002 SUF1002 SOP-8 Tape & Reel Marking and Pin As

1.54. 2sb1002.pdf Size:31K _hitachi

2SB1002 Silicon PNP Epitaxial Application � Low frequency power amplifier � Complementary pair with 2SD1368 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1002 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO �70 V Collector to emitter voltage VCEO �50 V Emitter to base voltage VEBO �6 V Collector curr

1.55. spm1002.pdf Size:302K _igbt

SPM1002 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION:  600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE  FAST SWITCHING 3RD GENERATION IGBT  SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT

1.56. ap1002bmx.pdf Size:99K _a-power

AP1002BMX Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lead-Free Package D BVDSS 30V Ў Low Conductance Loss RDS(ON) 1.8m? Ў Low Profile ( < 0.7mm ) ID 32A G Ў Compatible with DirectFET® Package MX S Footprint and Outline Description The AP1002BMX used the latest APEC Power MOSFET silicon technology with the advanced technology pa

1.57. 1002.pdf Size:1870K _goford

GOFORD 1002 Description The 1002 uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDSS RDS(ON) ID S @ 10V (typ) Schematic diagram mΩ 2A 100V 185 ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current �

1.58. g1002l.pdf Size:1899K _goford

GOFORD G1002L Description The G1002L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID @ 10V (typ) 2A mΩ 100V 180 ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package f

1.59. g1002 to92.pdf Size:1877K _goford

GOFORD G1002 Description D The G1002 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features ● S VDSS RDS(ON) ID Schematic diagram @ 10V (typ) 2A mΩ 100V 200 ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curren

1.60. rn1002.pdf Size:244K _blue-rocket-elect

RN1002(3RC1002) 硅 NPN 数字三极管/SILICON NPN DIGITAL TRANSISTOR 用途:用于开关、反相电路、界面电路以及驱动电路中。 Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. 特点:内装偏置电阻，简化线路设计，减少元件和制造流程。 Features: With built-in bias resistors, simplify circuit design, reduce a q

1.61. 2sb1002.pdf Size:588K _kexin

SMD Type Transistors PNP Transistors 2SB1002 ■ Features 1.70 0.1 ● Low frequency power amplifier ● Complementary to 2SD1368 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -70 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Cont

Datasheet: 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 , SSS5N60 , SSS7N60 , SSS8N60 , 2SK3878 , 1115 , 1515 , G1601 , 2300 , 2301 , 2302 , 3035 , 3400 .

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