1002 Specs and Replacement
Type Designator: 1002
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: SOT23
1002 substitution
- MOSFET ⓘ Cross-Reference Search
1002 datasheet
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
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fdy1002pz.pdf
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ksr1002.pdf
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apt1002rcn.pdf
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apt10026l2ll.pdf
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apt10025jlc.pdf
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apt10025pvr.pdf
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apt10026l2fll.pdf
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apt10026l2fllg.pdf
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apt10026jll.pdf
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apt10026l2fl.pdf
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apt10026jn.pdf
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apt1002r4bn.pdf
D TO-247 G APT1002RBN 1000V 7.0A 2.00 S APT1002R4BN 1000V 6.5A 2.40 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 1002RBN 1002R4BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25 C 7.0 6.5 Amps IDM Pulsed Drain Current 1... See More ⇒
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suf1002.pdf
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2sb1002.pdf
2SB1002 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1368 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1002 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6 V ... See More ⇒
d1002uk.pdf
TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED A MULTI-PURPOSE SILICON B C DMOS RF FET 1 2 40W 28V 175MHz D 4 3 E SINGLE ENDED M F G FEATURES SIMPLIFIED AMPLIFIER DESIGN H K I J SUITABLE FOR BROAD BAND APPLICATIONS DA LOW Crss PIN 1 SOURCE PIN 2 DRAIN PIN 3 SOURCE PIN 4 GATE SIMPLE BIAS CIRCUITS ... See More ⇒
ap1002bmx.pdf
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g1002l.pdf
GOFORD G1002L Description The G1002L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @ 10V (typ) 2A m 100V 180 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package f... See More ⇒
g1002 to92.pdf
GOFORD G1002 Description D The G1002 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDSS RDS(ON) ID Schematic diagram @ 10V (typ) 2A m 100V 200 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren... See More ⇒
rn1002.pdf
RN1002(3RC1002) NPN /SILICON NPN DIGITAL TRANSISTOR Purpose Switching, inverter circuit, interface circuit and driver circuit applications. Features With built-in bias resistors, simplify circuit design, reduce a q... See More ⇒
2sb1002.pdf
SMD Type Transistors PNP Transistors 2SB1002 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1368 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -70 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Cont... See More ⇒
mrf1002ma.pdf
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mrf1002mb.pdf
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sef401002.pdf
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spm1002.pdf
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sradm1002.pdf
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sl1002b.pdf
SL1002B N-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m... See More ⇒
st1002.pdf
ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo... See More ⇒
jmsh1002ytl.pdf
100V, 215A, 2.3m N-channel Power SGT MOSFET JMSH1002YTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 215 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.3 mW Applications Load Switch PWM Application Power Ma... See More ⇒
jmsh1002aeq.pdf
JMSH1002AEQ 100V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications ... See More ⇒
jmsh1002tc jmsh1002te.pdf
JMSH1002TC JMSH1002TE 100V 2.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 193 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS... See More ⇒
jmsh1002nc jmsh1002ne.pdf
JMSH1002NC JMSH1002NE 100V 2.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 284 A RDS(ON) (@ VGS = 10V) 2.2 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicl... See More ⇒
jmsh1002ac jmsh1002ae.pdf
JMSH1002AC JMSH1002AE 100V 1.6mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 271 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Ind... See More ⇒
jmsh1002ns.pdf
100V, 274A, 3.2m N-channel Power SGT MOSFET JMSH1002NS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 274 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.2 mW Applications Load Switch PWM Application Power Man... See More ⇒
jmsh1002bc jmsh1002be.pdf
JMSH1002BC JMSH1002BE 100V 2.1m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 258 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.1 m Halogen-free and RoHS-compliant Applications Power Management in Telecom., I... See More ⇒
jmsh1002re.pdf
100V, 241A, 2.2m N-channel Power SGT MOSFET JMSH1002RE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 3.2 V Halogen-free; RoHS-compliant ID(@VGS=10V) 241 A Pb-free plating RDS(ON)_Typ(@VGS=10V) 2.2 mW Applications Load Switch PWM Application Power Mana... See More ⇒
jmsh1002as.pdf
JMSH1002AS 100V 1.7mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.7 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus... See More ⇒
jmsh1002asq.pdf
JMSH1002ASQ 100V 1.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 333 A RDS(ON)_Typ (@ VGS = 10V) 1.8 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application... See More ⇒
jmsh1002yc jmsh1002ye.pdf
JMSH1002YC JMSH1002YE 100V 3.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS... See More ⇒
jmsh1002ttl.pdf
100V, 280A, 1.6m N-channel Power SGT MOSFET JMSH1002TTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 280 A RDS(ON)_Typ(@VGS=10V 1.6 mW Applications Load Switch PWM Application Power Management PowerJE 10... See More ⇒
jmsh1002ntl.pdf
JMSH1002NTL 100V 2.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 337 A RDS(ON) (@ VGS = 10V) 2.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics... See More ⇒
se100250gts.pdf
SE100250GTS N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = 100V DS low operation voltage. This device is R =2.5m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outlin... See More ⇒
2sa1002.pdf
isc Silicon PNP Power Transistor 2SA1002 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒
Detailed specifications: 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 , SSS5N60 , SSS7N60 , SSS8N60 , IRFB7545 , 1115 , 1515 , G1601 , 2300 , 2301 , 2302 , 3035 , 3400 .
Keywords - 1002 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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