All MOSFET. 1002 Datasheet

 

1002 Datasheet and Replacement


   Type Designator: 1002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: SOT23
 

 1002 substitution

   - MOSFET ⓘ Cross-Reference Search

 

1002 Datasheet (PDF)

 ..1. Size:1870K  goford
1002.pdf pdf_icon

1002

GOFORD1002Description The 1002 uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDSS RDS(ON) IDS @10V (typ)Schematic diagram m 2A100V 185 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

 0.1. Size:109K  motorola
mrf1002ma mrf1002mb.pdf pdf_icon

1002

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1002MA/DThe RF LineMicrowave PulseMRF1002MAPower TransistorsMRF1002MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts Peak2.0 W (PEAK), 9601215 MHzMinimu

 0.2. Size:300K  motorola
mj10022r.pdf pdf_icon

1002

Order this documentMOTOROLAby MJ10022/DSEMICONDUCTOR TECHNICAL DATAMJ10022MJ10023Designer's Data SheetSWITCHMODE Series40 AMPERENPN Silicon Power DarlingtonNPN SILICONPOWER DARLINGTONTransistors with Base-EmitterTRANSISTORS350 AND 400 VOLTSSpeedup Diode250 WATTSThe MJ10022 and MJ10023 Darlington transistors are designed for highvoltage,highspeed, pow

 0.3. Size:109K  motorola
mrf1002m.pdf pdf_icon

1002

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1002MA/DThe RF LineMicrowave PulseMRF1002MAPower TransistorsMRF1002MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts Peak2.0 W (PEAK), 9601215 MHzMinimu

Datasheet: 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 , SSS5N60 , SSS7N60 , SSS8N60 , 8N60 , 1115 , 1515 , G1601 , 2300 , 2301 , 2302 , 3035 , 3400 .

History: APT50M50JVFR

Keywords - 1002 MOSFET datasheet

 1002 cross reference
 1002 equivalent finder
 1002 lookup
 1002 substitution
 1002 replacement

 

 
Back to Top

 


 
.