GOFORD1002Description The 1002 uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDSS RDS(ON) IDS @10V (typ)Schematic diagram m 2A100V 185 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1002MA/DThe RF LineMicrowave PulseMRF1002MAPower TransistorsMRF1002MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts Peak2.0 W (PEAK), 9601215 MHzMinimu

Order this documentMOTOROLAby MJ10022/DSEMICONDUCTOR TECHNICAL DATAMJ10022MJ10023Designer's Data SheetSWITCHMODE Series40 AMPERENPN Silicon Power DarlingtonNPN SILICONPOWER DARLINGTONTransistors with Base-EmitterTRANSISTORS350 AND 400 VOLTSSpeedup Diode250 WATTSThe MJ10022 and MJ10023 Darlington transistors are designed for highvoltage,highspeed, pow

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1002MA/DThe RF LineMicrowave PulseMRF1002MAPower TransistorsMRF1002MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts Peak2.0 W (PEAK), 9601215 MHzMinimu

Order this documentMOTOROLAby MJ10020/DSEMICONDUCTOR TECHNICAL DATAMJ10020MJ10021Designer's Data SheetSWITCHMODE Series60 AMPERENPN Silicon Power DarlingtonNPN SILICONPOWER DARLINGTONTransistors with Base-EmitterTRANSISTORS200 AND 250 VOLTSSpeedup Diode250 WATTSThe MJ10020 and MJ10021 Darlington transistors are designed for highvoltage,highspeed, pow

MSC81002RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 2.0 W MIN. WITH 10 dB GAIN @OUT =1 GHz.230 2L STUD (S016)hermetically sealedORDER CODE BRANDINGMSC81002 81002PIN CONNECTIONDESCRIPTIONThe MSC81002 is a common base hermeticallysealed silicon NPN micro

Ordering number:EN5887P-Channel Silicon MOSFETFTS1002DC-DC Converter ApplicationsFeatures Package Dimensions Low ON Resistance.unit:mm 4V drive.2147 Mount height 1.1mm.[FTS1002]3.00.9750.658 51:Drain2:Source3:Source4:Gate5:Drain1 46:Source0.1250.257:Source8:DrainSANYO:TSSOP8SpecificationsAbsolute Maximum Ratings at Ta = 25CPar

Preliminary Datasheet RJK1002DPP-E0 R07DS0626EJ0200N-Channel MOS FET Rev.2.00100 V, 70 A, 7.6 m Oct 17, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S23Ab

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

October 2008FDY1002PZDual P-Channel (1.5 V) Specified PowerTrench MOSFET20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 AThis Dual P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 Aoptimize the rDS(on)@VG

PHPT61002PYCLH100 V, 2 A PNP high power bipolar transistor13 July 2017 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.NPN complement: PHPT61002NYCLH.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

PHPT61002NYCLH100 V, 2 A NPN high power bipolar transistor31 March 2017 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.PNP complement: PHPT61002PYCLH2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced P

PHPT61002NYC100V, 2 A NPN high power bipolar transistor9 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61002PYC2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

PHPT61002PYC100 V, 2 A PNP high power bipolar transistor10 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61002NYC.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

KSR1002 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=10 ) Complement to KSR2002ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Vo

Si1002Rwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) 100 % Rg tested0.560 at VGS = 4.5 V 0.5 Gate-source ESD protected: 1000 V0.620 at VGS = 2.5 V 0.230 0.72 nC Material categorization:0.700 at VGS = 1.8 V 0.2For definitions of compliance please see1.

CXDM1002NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM1002N is MOSFETa high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current.MARKING: FULL PART NUMBE

DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.05mm 1.77mm IS BVSSS RSS(ON) Max Height = 0.11mm for Low Profile TA = +25C ESD Protection of Gate 2.75m @ VGS = 4.5V 24.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.1m @ VGS = 2.5V 16.4A Halogen and Antimony Free. Green D

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter

2021/8/6 FAIR-S-A0002366002-1.pdfhttps://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 1/72021/8/6 FAIR-S-A0002366002-1.pdfhttps://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 2/72021/8/6 FAIR-S-A0002366002-1.pdfhttps://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u

DTO-254GAPT1002RCN 1000V 5.5A 2.00STMPOWER MOS IVN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1002RCN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C5.5AmpsIDM Pulsed Drain Current 122VGS Gate-Source Voltage30 VoltsTotal Powe

APT10025JVFR1000V 34A 0.250POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

APT10021JLL1000V 37A 0.210WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

APT10021JFLL1000V 37A 0.210WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

APT10025JVR1000V 34A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT10026L2LL1000V 38A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent

APT10025JLC1000V 34A 0.250WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT

APT10025PVR1000V 33A 0.250POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed

APT10026L2FLL1000V 38A 0.260R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally

APT10026JLL1000V 30A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed

DGAPT10026JN 1000V 33A 0.26S"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IV SINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 10026JN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C33AmpsIDM, lLM Pulse

DTO-247GAPT1002RBN 1000V 7.0A 2.00SAPT1002R4BN 1000V 6.5A 2.40POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1002RBN 1002R4BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C7.0 6.5AmpsIDM Pulsed Drain Current 1

APT10026JFLL1000V 30A 0.140WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features Low drain-source On-resistance: RDS(on)=24m @VGS=10V, ID=2.9A Low gate charge: Qg=79.5nC (Typ.) High power and current handing capability Lead free product is acquired SOP-8 Ordering Information Part Number Marking Code Package Packaging SUF1002 SUF1002 SOP-8 Tape & Reel Marki

2SB1002Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1368OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1002Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6 V

TetraFETD1002UKROHS COMPLIANT METAL GATE RF SILICON FETMECHANICAL DATAGOLD METALLISEDAMULTI-PURPOSE SILICONBCDMOS RF FET1 240W 28V 175MHzD4 3ESINGLE ENDEDMFGFEATURES SIMPLIFIED AMPLIFIER DESIGN H K I J SUITABLE FOR BROAD BAND APPLICATIONSDA LOW CrssPIN 1 SOURCE PIN 2 DRAINPIN 3 SOURCE PIN 4 GATE SIMPLE BIAS CIRCUITS

AP1002BMXHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile (

GOFORDG1002LDescription The G1002L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @10V (typ)2Am100V 180 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package f

GOFORDG1002Description DThe G1002 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features SVDSS RDS(ON) IDSchematic diagram @10V (typ)2Am100V 200 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

RN1002(3RC1002) NPN /SILICON NPN DIGITAL TRANSISTOR : Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. : Features: With built-in bias resistors, simplify circuit design, reduce a q

SMD Type TransistorsPNP Transistors2SB1002 Features1.70 0.1 Low frequency power amplifier Complementary to 2SD13680.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -70 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Cont

HG RF POWER TRANSISTORMRF1002MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1

HG RF POWER TRANSISTORMRF1002MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1

SEMITRONICS CORP. SEF401002 64 Commercial Street, Freeport, N.Y. 11520 POWER MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Fast Switching Low RDS(on) 0.025 Ohms High Current & High Power MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE OUT

SPM1002 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE FAST SWITCHING 3RD GENERATION IGBT SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT

SENSITRON SRADM1002 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5311, REV. A HERMETIC RAD HARD POWER MOSFET N-CHANNEL QUAD FEATURES: Four 250 Volt, 0.36 Ohm, 4.4A RAD HARD MOSFETs Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad (Level R) Fast Switching

SL1002BN-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m

ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo

SE100250GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 100VDSlow operation voltage. This device is R =2.5m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outlin

isc Silicon PNP Power Transistor 2SA1002DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta