G1601 PDF and Equivalents Search

 

G1601 Specs and Replacement

Type Designator: G1601

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOT23

G1601 substitution

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G1601 datasheet

 ..1. Size:2281K  goford
 g1601.pdf pdf_icon

G1601

GOFORD G1601 DESCRIPTION D The G1601 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @ (Typ) @-2.5V -4.5V -20V 55m 70m -2.6 A G1601 ... See More ⇒

 0.1. Size:131K  renesas
 rej03g1601 h7p1002dldsds.pdf pdf_icon

G1601

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: SSS1N60 , SSS2N60 , SSS5N60 , SSS7N60 , SSS8N60 , 1002 , 1115 , 1515 , EMB04N03H , 2300 , 2301 , 2302 , 3035 , 3400 , 3401 , 3415 , 6616 .

Keywords - G1601 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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