All MOSFET. G1601 Datasheet

 

G1601 Datasheet and Replacement


   Type Designator: G1601
   Marking Code: G1601
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT23
 

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G1601 Datasheet (PDF)

 ..1. Size:2281K  goford
 g1601.pdf pdf_icon

G1601

GOFORDG1601DESCRIPTION DThe G1601 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @ (Typ) @-2.5V -4.5V -20V55m 70m -2.6AG1601

 0.1. Size:131K  renesas
 rej03g1601 h7p1002dldsds.pdf pdf_icon

G1601

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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Keywords - G1601 MOSFET datasheet

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