6703 Specs and Replacement
Type Designator: 6703
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.08) Ohm
Package: SOT23-6
6703 substitution
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6703 datasheet
6703.pdf
GOFORD 6703 Description The 6703 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). . General Features N-Channel VDSS RDS(ON) RDS(ON) ID N-Channel P-Channel @4.5V (Typ) @2.5V (Typ) 20V 30m 37m 2.9 A P-Channel VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) Marking and pin assignment -20V 80m 110... See More ⇒
shd226703.pdf
SHD226703 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4193, REV. - HERMETIC POWER MOSFET - N-CHANNEL FEATURES 200 Volt, 0.08 Ohm, 27A MOSFET Isolated Hermetic Metal Package Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - Volts 20 ON-STATE DRAIN C... See More ⇒
2n6703.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6703 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switc... See More ⇒
Detailed specifications: 2300 , 2301 , 2302 , 3035 , 3400 , 3401 , 3415 , 6616 , IRFZ44N , 6760 , 7080 , 8070 , 8680 , G29 , G33 , G37 , G3N15 .
Keywords - 6703 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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