GOFORD6703Description The 6703 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). . General Features N-Channel VDSS RDS(ON) RDS(ON) ID N-Channel P-Channel @4.5V (Typ) @2.5V (Typ)20V30m 37m 2.9A P-Channel VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)Marking and pin assignment -20V80m 110

SHD226703 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4193, REV. - HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 200 Volt, 0.08 Ohm, 27A MOSFET Isolated Hermetic Metal Package Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - Volts 20 ON-STATE DRAIN C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6703DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators and a variety of power switc