7080 Datasheet and Replacement
Type Designator: 7080
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
7080 substitution
7080 Datasheet (PDF)
7080.pdf

GOFORD7080Features Applications VDSS=70VVGSS=25VID=80A Power Management in Inverter System Synchronous Rectification RDS(ON)=8m(max.)@VGS=10V Super High Dense Cell Design Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Pin Description Waveforms Page 1
ru7080l.pdf

RU7080LN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,D RDS (ON) =5.7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Power SupplyGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitC
ru7080s.pdf

RU7080SN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,D RDS (ON) =7m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications Motor Drives Uninterruptible Power SuppliesG DC/DC converter
Datasheet: 2302 , 3035 , 3400 , 3401 , 3415 , 6616 , 6703 , 6760 , IRF740 , 8070 , 8680 , G29 , G33 , G37 , G3N15 , G50N10 , G60N04 .
Keywords - 7080 MOSFET datasheet
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