All MOSFET. 8070 Datasheet

 

8070 Datasheet and Replacement


   Type Designator: 8070
   Marking Code: 8070
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 77 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO220
 

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8070 Datasheet (PDF)

 ..1. Size:1398K  goford
 8070.pdf pdf_icon

8070

GOFORD8070Features Applications VDSS=80VVGSS=25VID=70A Synchronous Rectification Power Management in Inverter System RDS(ON)=11m(Max.)@VGS=10V Avalanche Rated Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Pin Description Waveforms Page 1HTTP://www.

 0.1. Size:234K  toshiba
 tpcc8070.pdf pdf_icon

8070

TPCC8070MOSFETs Silicon N-channel MOS (U-MOS)TPCC8070TPCC8070TPCC8070TPCC80701. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 10.8 m (typ.) (VGS = 10 V)(3) Low

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History: G1601 | 2302

Keywords - 8070 MOSFET datasheet

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