8070 Datasheet and Replacement
Type Designator: 8070
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO220
8070 substitution
8070 Datasheet (PDF)
8070.pdf

GOFORD8070Features Applications VDSS=80VVGSS=25VID=70A Synchronous Rectification Power Management in Inverter System RDS(ON)=11m(Max.)@VGS=10V Avalanche Rated Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Pin Description Waveforms Page 1HTTP://www.
tpcc8070.pdf

TPCC8070MOSFETs Silicon N-channel MOS (U-MOS)TPCC8070TPCC8070TPCC8070TPCC80701. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 10.8 m (typ.) (VGS = 10 V)(3) Low
Datasheet: 3035 , 3400 , 3401 , 3415 , 6616 , 6703 , 6760 , 7080 , IRF840 , 8680 , G29 , G33 , G37 , G3N15 , G50N10 , G60N04 , G66 .
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