All MOSFET. G3N15 Datasheet

 

G3N15 Datasheet and Replacement


   Type Designator: G3N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT223-3L
 

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G3N15 Datasheet (PDF)

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G3N15

GOFORDG3N15Description DThe G3N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @10V (typ) 3 A150V 260m High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

Datasheet: 6703 , 6760 , 7080 , 8070 , 8680 , G29 , G33 , G37 , IRFP460 , G50N10 , G60N04 , G66 , G66-3L , G68 , G69 , G80N06 , G96 .

History: LPM9031SOF | MMBF4091 | LPM9031QVF | LPM8205TSF | LPM9030

Keywords - G3N15 MOSFET datasheet

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