G60N04 MOSFET Datasheet: N-Ch, 40V, 60A. Full specification with pinout and replacement list

G60N04 Specs and Replacement

Type Designator: G60N04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO220 TO252

G60N04 substitution

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G60N04 datasheet

..1. Size:1281K goford
g60n04 to220.pdf pdf_icon

GOFORD G60N04 Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 40V 12.5m 8.5 m 60 A High density cell design for ultra low Rdson Fully characterized aval... See More ⇒

..2. Size:1322K goford
g60n04.pdf pdf_icon

GOFORD .G60N04 Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 45V 11 m 9.7 m 60 A High density cell design for ultra low Rdson Fully characterized aval... See More ⇒

..3. Size:1315K goford
g60n04 to252.pdf pdf_icon