All MOSFET. G66-3L Datasheet

 

G66-3L Datasheet and Replacement


   Type Designator: G66-3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: DFN2X2-3L
 

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G66-3L Datasheet (PDF)

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G66-3L

GOFORDG66DDescription The G66 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)-16V 32 m 45m -5.8A High Power

Datasheet: 8680 , G29 , G33 , G37 , G3N15 , G50N10 , G60N04 , G66 , IRFP260N , G68 , G69 , G80N06 , G96 , GD1 , G22 , G23 , G11 .

History: APT5017BVFR | G3N15 | FDS8449F085 | PHW11N50E | FDMS7672AS | SP2013 | FDD3682

Keywords - G66-3L MOSFET datasheet

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