G66-3L PDF and Equivalents Search

 

G66-3L Specs and Replacement

Type Designator: G66-3L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: DFN2X2-3L

G66-3L substitution

- MOSFET ⓘ Cross-Reference Search

 

G66-3L datasheet

 ..1. Size:1729K  goford
 g66-3l.pdf pdf_icon

G66-3L

GOFORD G66 D Description The G66 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -16V 32 m 45m -5.8 A High Power... See More ⇒

Detailed specifications: 8680 , G29 , G33 , G37 , G3N15 , G50N10 , G60N04 , G66 , IRLZ44N , G68 , G69 , G80N06 , G96 , GD1 , G22 , G23 , G11 .

History: IRFP3703

Keywords - G66-3L MOSFET specs

 G66-3L cross reference
 G66-3L equivalent finder
 G66-3L pdf lookup
 G66-3L substitution
 G66-3L replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.