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G68 Specs and Replacement

Type Designator: G68

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: DFN2X2-6L

G68 substitution

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G68 datasheet

 ..1. Size:1419K  goford
 g68.pdf pdf_icon

G68

GOFORD G68 Description D The G68 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram VDSS RDS(ON) ID @ - 4.5V (typ) -7 A -18V 20m Advanced trench MOSFET proc... See More ⇒

 0.1. Size:140K  diodes
 dmg6898lsd.pdf pdf_icon

G68

DMG6898LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections See Di... See More ⇒

Detailed specifications: G29 , G33 , G37 , G3N15 , G50N10 , G60N04 , G66 , G66-3L , IRFB4110 , G69 , G80N06 , G96 , GD1 , G22 , G23 , G11 , G16 .

History: G69

Keywords - G68 MOSFET specs

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