All MOSFET. G68 Datasheet

 

G68 Datasheet and Replacement


   Type Designator: G68
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: DFN2X2-6L
 

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G68 Datasheet (PDF)

 ..1. Size:1419K  goford
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G68

GOFORD G68Description DThe G68 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diagram VDSS RDS(ON) ID @- 4.5V (typ)-7 A-18V20m Advanced trench MOSFET proc

 0.1. Size:140K  diodes
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G68

DMG6898LSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Di

Datasheet: G29 , G33 , G37 , G3N15 , G50N10 , G60N04 , G66 , G66-3L , IRF640N , G69 , G80N06 , G96 , GD1 , G22 , G23 , G11 , G16 .

History: APT5024AVR

Keywords - G68 MOSFET datasheet

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