All MOSFET. G68 Datasheet

 

G68 MOSFET. Datasheet pdf. Equivalent


   Type Designator: G68
   Marking Code: G68
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: DFN2X2-6L

 G68 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G68 Datasheet (PDF)

 ..1. Size:1419K  goford
g68.pdf

G68 G68

GOFORD G68Description DThe G68 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diagram VDSS RDS(ON) ID @- 4.5V (typ)-7 A-18V20m Advanced trench MOSFET proc

 0.1. Size:140K  diodes
dmg6898lsd.pdf

G68 G68

DMG6898LSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Di

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History: SSTSD201 | SSW80R180S2

 

 
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